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发明公开
CN107833881A 集成电路和形成集成电路的方法 有权

集成电路和形成集成电路的方法
摘要：
IC结构包括单元、第一导轨和第二导轨。单元包括第一有源区、第二有源区和第一栅极结构。第一有源区和第二有源区在第一方向上延伸并且位于第一层级处。第二有源区在第二方向上与第一有源区分离。第一栅极结构在第二方向上延伸，与第一有源区和第二有源区重叠，并且位于第二层级处。第一导轨在第一方向上延伸，与第一有源区重叠，配置为提供第一电源电压，并且位于第三层级处。第二导轨在第一方向上延伸，与第二有源区重叠，位于第三层级处，在第二方向上与第一导轨分离，并且配置为提供第二电源电压。本发明还提供了形成集成电路的方法。
摘要（英）：

An IC structure includes a cell, a first rail and a second rail. The cell includes a first and a second active region and a first gate structure. The first and second active region extend in a first direction and is located at a first level. The second active region is separated from the first active region in a second direction. The first gate structure extends in the second direction, overlaps the first and second active region, and is located at a second level. The first rail extends in the first direction, overlaps the first active region, is configured to supply a first supply voltage, and is located at a third level. The second rail extends in the first direction, overlaps the second active region, is located at the third level, separated from the first rail in the second direction,and is configured to supply a second supply voltage.

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