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发明公开
CN108611638A 高磨耗比、高断裂强度微米金刚石厚膜及其制备方法 有权

高磨耗比、高断裂强度微米金刚石厚膜及其制备方法
摘要：
本发明为一种高磨耗比、高断裂强度微米金刚石厚膜及其制备方法，属于超硬材料制备技术领域。本发明厚膜由紧密连接的多层微米金刚石膜层和多层金属膜层复合而成的，微米金刚石膜层和金属膜层依次间隔设置，且最顶层和最底层都为微米金刚石膜层；微米金刚石膜中（110）晶粒取向占优，晶粒尺寸为10-200μm，膜厚度为50-200μm；金属膜层的厚度为1-10μm。制备时，采用化学气相沉积方法沉积金刚石膜层，采用薄膜合成方法制备金属膜层。本发明通过添加金属膜层阻断微米金刚石晶粒的长大，使后续的金刚石在金属层表面重新形核并生长。最终获得的金刚石厚膜主要由细小晶粒（110）取向占优的微米金刚石构成，具有高的磨耗比和高的断裂强度。
摘要（英）：

The invention discloses a high-abrasive-ratio and high-fracture-strength micron diamond thick film and a preparing method thereof, and belongs to the technical field of super-hard material preparing.The thick film is formed by combining of multiple micron diamond film layers and multiple metal film layers, wherein the micron diamond film layers and the metal film layers are tightly connected andare alternated, and the topmost layer and the bottommost layer are the micron diamond film layers; the (110) grain orientation in micron diamond films is dominant, the grain size ranges from 10 microns to 200 microns, and the film thickness ranges from 50 microns to 200 microns; and the thickness of the metal film layers ranges from 1 micron to 10 microns. During preparing, the diamond film layersare deposited through a chemical vapor deposition method, and the metal film layers are prepared through a film synthesizing method. Growth of micron diamond grains is stopped through adding of the metal film layers, and the subsequent diamond nucleates again on the surfaces of the metal layers and grows. The finally-obtained diamond thick film is mainly composed of micron diamond in which the fine grains (110) are in orientation domination, and the high abrasive ratio and high fracture strength are achieved.

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