The invention provides a non-contact working parameter measurement method for an IGBT (Insulated Gate Bipolar Translator) chip. The measurement method comprises the following steps that: firstly, utilizing the simulation model of a double-pulse testing circuit to determine a fit function which expresses a relationship between the working parameter of the IGBT chip and a PETT (Plasma Extraction Transit Time) oscillation signal generated in the working process of the IGBT chip; then, utilizing the double-pulse testing circuit to obtain the practical values of the PETT oscillation signal parameters corresponding to the practical values of different working parameters to obtain test data, and according to the test data, determining a coefficient to be determined in the fit function so as to obtain a fit function model; and then, adopting an antenna to obtain the PETT oscillation signal in the practical working process of the IGBT chip, and according to the function model and the PETT oscillation signal generated in the practical working process, obtaining the working parameter of the practical working process of the IGBT chip. Therefore, by use of the measurement method, the non-contact measurement of the IGBT chip is realized, and therefore, the real-time online monitoring of the working parameter of the IGBT chip in high-voltage power system converter valves, circuit breakers andthe like can be realized.