The invention relates to a trench gate IGBT device with a shunt region and a preparation method. The trench gate IGBT device is provided with a shunt region of a second conductivity type directly under the bottom of a cell trench, and the shunt region of a second conductivity type covers the bottom of the cell trench. The cell trench is filled with emitter metal and gate conductive polycrystallinesilicon. The gate conductive polycrystalline silicon is located in the outer ring of the emitter metal in the cell trench. The emitter metal is insulated and isolated from the gate conductive polycrystalline silicon by a metal insulating spacer. The gate conductive polycrystalline silicon is insulated and isolated from the side wall and the bottom wall of the cell trench by an insulated gate oxide layer. The emitter metal filling the cell trench is in ohmic contact with the shunt region of a second conductivity type directly under the bottom of the cell trench. The trench gate IGBT device canbe effectively improved in the anti-latching capability and the voltage withstand capability, reduced in Miller capacitance, increased in switching efficiency, and decreased in switching loss.