发明公开
EP1176623A3 Waveguide for microwave excitation of plasma in an ion beam guide
有权
波导用于在离子束引导装置的等离子体的微波激发
- 专利标题: Waveguide for microwave excitation of plasma in an ion beam guide
- 专利标题(中): 波导用于在离子束引导装置的等离子体的微波激发
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申请号: EP01306054.6申请日: 2001-07-13
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公开(公告)号: EP1176623A3公开(公告)日: 2005-06-15
- 发明人: Benveniste, Victor Maurice , Ye, John , Divergilio, William Frank
- 申请人: Axcelis Technologies, Inc.
- 申请人地址: 55 Cherry Hill Drive Beverly, MA 01915 US
- 专利权人: Axcelis Technologies, Inc.
- 当前专利权人: Axcelis Technologies, Inc.
- 当前专利权人地址: 55 Cherry Hill Drive Beverly, MA 01915 US
- 代理机构: Burke, Steven David
- 优先权: US625718 20000725
- 主分类号: H01J37/317
- IPC分类号: H01J37/317 ; H01J37/05 ; H01J37/32 ; H01J37/02 ; H01P3/16
摘要:
An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet (114) mounted in a passageway (139, 202) along the path (129) of an ion beam, a power source (174) adapted to provide an electric field in the passageway (139, 202), and a magnetic device (170) adapted to provide a multi-cusped magnetic field in the passageway (139, 202), which may include a plurality of magnets (220) mounted along at least a portion of the passageway (139, 202). The power source (174) and the magnets (220) may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion of the passageway (139, 202). The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam. The invention further comprises a mass analyzer waveguide (250) adapted to couple the electric field to the beam plasma consistently along the length of the mass analyzer passageway (202) to thereby improve the creation of the ECR condition. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method (300) of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.
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