发明公开
- 专利标题： A FIELD EFFECT TRANSISTOR OF SiC FOR HIGH TEMPERATURE APPLICATION, USE OF SUCH A TRANSISTOR AND A METHOD FOR PRODUCTION THEREOF
- 专利标题（中）： 碳化硅场效应晶体管和使用相同的气体传感器
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申请号： EP00928059.5申请日： 2000-04-20
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公开(公告)号： EP1186053A2公开(公告)日： 2002-03-13
- 发明人: KONSTANTINOV, Andrei , HARRIS, Christopher , SAVAGE, Susan
- 申请人： Acreo AB
- 申请人地址： Electrum 236 164 40 Kista SE
- 专利权人： Acreo AB
- 当前专利权人： Acreo AB
- 当前专利权人地址： Electrum 236 164 40 Kista SE
- 代理机构： Olsson, Jan
- 优先权： SE9901440 19990422
- 国际公布： WO0065660 20001102
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/24 ; H01L21/336
摘要：
A field effect transistor of SiC for high temperature application has the source region layer (4), the drain region layer (5) and the channel region layer (6, 7) vertically separated from a front surface (14), where a gate electrode (12) is arranged, for reducing the electric field at said surface in operation of the transistor and in the case of operation as a gas sensor permitting all electrodes except for the gate electrode to be protected from the atmosphere.
公开/授权文献
- EP1186053B1 SiC field-effect transistor and use thereof as gas sensor 公开/授权日：2009-12-30
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