发明公开
EP1690289A1 PROCESS FOR IMPROVING THE SURFACE ROUGHNESS OF A WAFER
有权
方法提高THEÖBERFLÄCHENRAUHIGKEIT的半导体晶片的
- 专利标题： PROCESS FOR IMPROVING THE SURFACE ROUGHNESS OF A WAFER
- 专利标题（中）： 方法提高THEÖBERFLÄCHENRAUHIGKEIT的半导体晶片的
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申请号： EP03789586.9申请日： 2003-12-03
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公开(公告)号： EP1690289A1公开(公告)日： 2006-08-16
- 发明人: NEYRET, Eric , ARENE, Emmanuel , ECARNOT, Ludovic
- 申请人： S.O.I.Tec Silicon on Insulator Technologies
- 申请人地址： Parc Technologique des Fontaines, Chemin des Franques 38190 Bernin FR
- 专利权人： S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人： S.O.I.Tec Silicon on Insulator Technologies
- 当前专利权人地址： Parc Technologique des Fontaines, Chemin des Franques 38190 Bernin FR
- 代理机构： Collin, Jérôme
- 国际公布： WO2005055308 20050616
- 主分类号： H01L21/324
- IPC分类号： H01L21/324 ; H01L21/302 ; H01L21/477
摘要：
The present invention relates to a process for reducing the roughness of the free surface of a semiconductor wafer, said process comprising a single annealing step for smoothing said free surface, said single annealing step being carried out as a RTA under an atmosphere of pure argon, characterized in that before the RTA the atmosphere of the annealing environment is purged in a controlled manner so as to establish a controlled purged atmosphere allowing reduction of preliminary pollutants on the wafer.
公开/授权文献
- EP1690289B9 PROCESS FOR IMPROVING THE SURFACE ROUGHNESS OF A WAFER 公开/授权日：2012-03-14
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