发明公开
EP2255376A1 ULTRA HIGH DENSITY CAPACITY COMPRISING PILLAR-SHAPED CAPACITORS FORMED ON BOTH SIDES OF A SUBSTRATE
有权
形成在基板的柱状电容器的两侧超高密度的电容器布置的制造方法
- 专利标题： ULTRA HIGH DENSITY CAPACITY COMPRISING PILLAR-SHAPED CAPACITORS FORMED ON BOTH SIDES OF A SUBSTRATE
- 专利标题（中）： 形成在基板的柱状电容器的两侧超高密度的电容器布置的制造方法
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申请号： EP09712370.7申请日： 2009-02-17
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公开(公告)号： EP2255376A1公开(公告)日： 2010-12-01
- 发明人: NEUILLY, Francois , LE CORNEC, Francois
- 申请人： NXP B.V.
- 申请人地址： High Tech Campus 60 5656 AG Eindhoven NL
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： High Tech Campus 60 5656 AG Eindhoven NL
- 代理机构： Krott, Michel
- 优先权： EP08290160 20080220
- 国际公布： WO2009104132 20090827
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L23/498 ; H01L27/06 ; H01L21/334 ; H01L27/08 ; H01L29/94 ; H01L21/768 ; H01L27/02
摘要：
The present invention describes an ultra High-Density Capacitor design, integrated in a semiconductor substrate, preferably a Si substrate, by using both wafer sides. The capacitors are pillar-shaped and comprise electrodes (930,950) separated by a dielectric layer (940).Via connections (920) are provided in trenches that go through the whole thickness of the wafer.
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