A substrate achieving suppressed deterioration of processing accuracy of a semiconductor device due to bending of the substrate, a substrate with a thin film and a semiconductor device formed with the substrate above, and a method of manufacturing the semiconductor device above are obtained. A substrate (1) according to the present invention has a main surface (1a) having a diameter of 2 inches or greater, a value for bow at the main surface (1a) being not smaller than -40 µm and not greater than -5 µm, and a value for warp at the main surface (1a) being not smaller than 5 µm and not greater than 40 µm. Preferably, a value for surface roughness Ra of the main surface (1a) of the substrate (1) is not greater than 1 nm and a value for surface roughness Ra of a main surface (1b) is not greater than 100 nm.