发明公开
EP2671965A3 Method of forming thin film polysilicon layer and method of forming thin film transistor
审中-公开
一种生产用于形成薄膜晶体管的薄膜多晶硅层和方法的工序
- 专利标题： Method of forming thin film polysilicon layer and method of forming thin film transistor
- 专利标题（中）： 一种生产用于形成薄膜晶体管的薄膜多晶硅层和方法的工序
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申请号： EP13171120.2申请日： 2013-06-07
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公开(公告)号： EP2671965A3公开(公告)日： 2014-03-12
- 发明人: Huang, Hieng-Hsiung , Wang, Wen-Chun , Chang, Heng-Yi , Liu, Chin-Chang
- 申请人： Wintek Corporation
- 申请人地址： N° 10, Jianguo Rd., Tanzi Dist. 42760 Taichung City TW
- 专利权人： Wintek Corporation
- 当前专利权人： Wintek Corporation
- 当前专利权人地址： N° 10, Jianguo Rd., Tanzi Dist. 42760 Taichung City TW
- 代理机构： Becker Kurig Straus
- 优先权： TW101120669 20120608; TW101125823 20120718; TW101136512 20121003
- 主分类号： C23C14/18
- IPC分类号： C23C14/18 ; C23C14/02 ; C23C16/24 ; C23C16/48 ; H01L29/66 ; H01L29/49 ; C23C16/02 ; H01L29/786 ; C30B29/06 ; H01L21/20 ; H01L21/02
摘要：
A method of forming a thin film poly silicon layer (20, 22, 120, 220, 320, 420, 520, 620) includes the following steps. A substrate (110, 310, 510) is provided. A heating treatment is then performed. A thin film poly silicon layer (20, 22, 120, 220, 320, 420, 520, 620) is then directly formed on a first surface (110A, 310A, 510A) of the substrate (110, 310, 510) by a silicon thin film deposition process. A method of forming a thin film transistor (T1, T2, T3, T4, T5) includes the following steps. A first patterning process is performed on the thin film poly silicon layer (20, 22, 120, 220, 320, 420, 520, 620) to form a semiconductor pattern (20P, 22P). Subsequently, a gate insulation layer (30, 32, 33, 34), a gate electrode (40G, 44G, 53G), a source electrode (40S, 43S, 60S, 64S) and a drain electrode (40D, 43D, 60D, 64D) are formed.
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