- 专利标题: SINGLE CHIP BRIDGE MAGNETIC FIELD SENSOR AND PREPARATION METHOD THEREOF
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申请号: EP12767908.2申请日: 2012-04-01
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公开(公告)号: EP2696211B1公开(公告)日: 2018-10-31
- 发明人: LEI, Xiaofeng , JIN, Insik , DEAK, James Geza , SHEN, Weifeng , LIU, Mingfeng , XUE, Songsheng
- 申请人: MultiDimension Technology Co., Ltd
- 申请人地址: No. 7 Guangdong Road, Free Trade Zone Zhangjiagang, Jiangsu 215634 CN
- 专利权人: MultiDimension Technology Co., Ltd
- 当前专利权人: MultiDimension Technology Co., Ltd
- 当前专利权人地址: No. 7 Guangdong Road, Free Trade Zone Zhangjiagang, Jiangsu 215634 CN
- 代理机构: HGF Limited
- 优先权: CN201110084595 20110406; CN201110326762 20111025
- 国际公布: WO2012136132 20121011
- 主分类号: G01R33/09
- IPC分类号: G01R33/09 ; G01B7/30 ; G01D5/16 ; H01L43/08 ; G01R33/00 ; G01R33/02 ; H01L43/02 ; B82Y10/00 ; G11B5/39 ; H01L43/12
摘要:
The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.
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