公开(公告)号：EP4019913A1

公开(公告)日：2022-06-29

申请号：EP20856630.7

申请日：2020-08-18

申请人： MultiDimension Technology Co., Ltd.

发明人： QI, Bin ,  XUE, Songsheng

IPC分类号： G01F23/22

摘要： A wall-mounted magnetic level gauge for material storage containers, the magnetic level gauge comprises: A magnetic displacement assembly (101), which is located on the sidewall of the material storage container and generates a mechanical displacement in response to the level of a material in the material storage container. It further includes a magnetic sensor assembly (2), comprising a protective housing (108), a magnetoresistive chip (103), and a processing module (2a) located within the protective housing (108). The protective housing (108) is fixed on the side wall of the material storage container. The magentoresistive chip (103) is located at a side of the processing module (2a) facing a magnet displacement assembly (101). The magnetic sensor assembly (2) is used to sense a magnetic field produced by the magnet displacement assembly (101) to determine the level of the material in the material storage container. The magnet displacement assembly (101) displaces the magnet according to the level of the material. The magnetoresistive chip senses a magnetic field change of the magnet displacement assembly (101) to determine the level of the material accordingly. The magnetic level gauge has the advantages of simple structure, low power consumption, high sensitivity, and low cost. It is suitable for the solid and liquid material measurement.

公开(公告)号：EP3940397A1

公开(公告)日：2022-01-19

申请号：EP20774231.3

申请日：2020-03-12

申请人： Multidimension Technology Co., Ltd

发明人： GUO, Haiping ,  SHEN, Weifeng ,  XUE, Songsheng

IPC分类号： G01R15/20

摘要： The present disclosure discloses a magnetic isolator, including a substrate, a magnetic field generating unit, a magnetic field sensing unit, a shielding layer, and an isolation dielectric, where the magnetic field generating unit includes a current conductor, the current conductor is arranged to extend along a first direction on one side of the substrate, the magnetic field sensing unit and the current conductor are arranged on the same side of the substrate, the magnetic field sensing unit is located on a lateral side of the current conductor, and a distance between the current conductor and the magnetic field sensing unit is greater than 0 along a second direction, where the first direction is perpendicular to the second direction; an isolation dielectric is arranged between the current conductor and the magnetic field sensing unit; and an isolation dielectric is arranged within the distance between the current conductor and the magnetic field sensing unit along the second direction, thereby playing a role in electrical isolation, facilitating improving the isolation strength, and simplifying the process. The shielding layer can absorb external interfering magnetic fields, and further improve the signal-to-noise ratio.

公开(公告)号：EP3441779A1

公开(公告)日：2019-02-13

申请号：EP17778656.3

申请日：2017-04-05

申请人： Multidimension Technology Co., Ltd.

发明人： XUE, Songsheng ,  LEI, Xiaofeng ,  SHEN, Weifeng ,  FENG, Lixian

IPC分类号： G01R33/09

摘要： The present invention comprises an anisotropic magnetoresistive (AMR) sensor without a set and reset device (100) comprising a substrate (140), an exchange bias layer (130), an AMR layer (110) and a collection of barber-pole electrodes (122). An exchange bias layer (130) is deposited on the substrate (140), and an AMR layer (110) is deposited on the exchange bias layer (130). The AMR layer (110) is composed of multiple groups of AMR strips, wherein each group of AMR strips is composed of several AMR strips. The barber-pole electrodes (122) are arranged on each AMR strip under certain rules. The AMR sensor (100) achieves coupling by using the exchange bias layer (130), without requiring a reset/set coil. Because a coil is not be used, the power consumption of the chip is reduced greatly, and the manufacturing process is simpler, providing improved yield and lower cost.

公开(公告)号：EP2696211B1

公开(公告)日：2018-10-31

申请号：EP12767908.2

申请日：2012-04-01

申请人： MultiDimension Technology Co., Ltd

发明人： LEI, Xiaofeng ,  JIN, Insik ,  DEAK, James Geza ,  SHEN, Weifeng ,  LIU, Mingfeng ,  XUE, Songsheng

IPC分类号： G01R33/09 ,  G01B7/30 ,  G01D5/16 ,  H01L43/08 ,  G01R33/00 ,  G01R33/02 ,  H01L43/02 ,  B82Y10/00 ,  G11B5/39 ,  H01L43/12

CPC分类号： H01L43/12 ,  B82Y10/00 ,  G01B7/30 ,  G01R33/0052 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3993 ,  G11B2005/3996 ,  H01L43/02 ,  H01L43/08

摘要： The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.

公开(公告)号：EP2682773B1

公开(公告)日：2018-10-31

申请号：EP12752760.4

申请日：2012-03-02

申请人： Multidimension Technology Co., Ltd.

发明人： DEAK, James Geza ,  SHEN, Weifeng ,  ZHANG, Xiaojun ,  LEI, Xiaofeng ,  JIN, Insik ,  XUE, Songsheng

IPC分类号： G01R33/09 ,  G01B7/30 ,  G01D5/16 ,  H01L43/08 ,  G01R33/00 ,  G01R33/02 ,  H01L43/02 ,  G01D5/14

CPC分类号： H01L43/02 ,  G01B7/30 ,  G01D5/145 ,  G01R33/098 ,  H01L43/08

摘要： A single-package bridge-type magnetic-field angle sensor comprising one or more pairs of magnetic tunnel junction sensor chips rotated relative to each other by 90 degrees in order to detect two magnetic field components in orthogonal directions respectively is disclosed. The magnetic-field angle sensor may comprise a pair of MTJ full-bridges or half-bridges interconnected with a semiconductor package lead. The magnetic-field angle sensor can be packaged into various low-cost standard semiconductor packages.

公开(公告)号：EP3267165A1

公开(公告)日：2018-01-10

申请号：EP16758456.4

申请日：2016-02-29

申请人： Multidimension Technology Co., Ltd.

发明人： XUE, Songsheng ,  SHEN, Weifeng ,  FENG, Lixian

IPC分类号： G01K7/18

摘要： A copper thermal resistance thin-film temperature sensor chip comprises a substrate (3), a temperature sensor, and two electrode plates (1, 2), the temperature sensor which has a plurality of electrically connected resistance elements (4) is placed on the substrate (3), a portion of the resistance elements form a resistance adjustment circuit (5). Integrated circuit elements are deposited by thin-film technology. It consists seed layer, copper thermal resistance thin-film layer above the seed layer and passivation layer above the copper thermal resistance thin-film layer. Through semiconductor manufacturing and processing technology, the thermistor layer of this structure is to be fabricated into a serious of thermistor wires and then to form the temperature sensor, furthermore this temperature sensor has a resistance adjustment circuit (5) which is used to adjust resistance value precisely. The preparation method of the sensor chip comprises depositing thin-film on the surface of the substrate, and then a final sensor chip can be obtained through the processing of magnetron sputtering, schematize, peeling, and etching. This sensor chip has the advantages of high impedance, excellent thermal stability, good linearity and low cost.

摘要翻译： 一种铜热电阻薄膜温度传感器芯片，包括衬底（3），温度传感器和两个电极板（1,2），温度传感器具有多个电连接的电阻元件（4） 衬底（3）中，一部分电阻元件形成电阻调节电路（5）。 集成电路元件通过薄膜技术沉积。 它由晶种层，晶种层上方的铜热阻薄膜层和铜热阻薄膜层上方的钝化层组成。 通过半导体制造和加工技术，将该结构的热敏电阻层制作成热敏电阻线，然后形成温度传感器，并且该温度传感器具有电阻调整电路（5），用于调整电阻值 恰恰。 传感器芯片的制备方法包括在基板表面沉积薄膜，然后通过磁控溅射，图案化，剥离和蚀刻的处理得到最终的传感器芯片。 该传感器芯片具有阻抗高，热稳定性好，线性好，成本低等优点。

公开(公告)号：EP2696211A1

公开(公告)日：2014-02-12

申请号：EP12767908.2

申请日：2012-04-01

申请人： Jiangsu MultiDimension Technology Co. Ltd

发明人： LEI, Xiaofeng ,  JIN, Insik ,  DEAK, James Geza ,  SHEN, Weifeng ,  LIU, Mingfeng ,  XUE, Songsheng

IPC分类号： G01R33/09 ,  G01B7/30 ,  G11B5/39

CPC分类号： H01L43/12 ,  B82Y10/00 ,  G01B7/30 ,  G01R33/0052 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3993 ,  G11B2005/3996 ,  H01L43/02 ,  H01L43/08

摘要： The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.

摘要翻译： 本发明公开了一种单芯片磁传感器桥的设计和制造方法。 传感器桥包括四个磁阻元件。 四个磁阻元件中的每一个的被钉扎层的磁化被设置在相同的方向上，但是桥接件的相邻臂上的磁阻元件的自由层的磁化方向相对于被钉扎层的磁化被设定在不同的角度 方向。 所有四个磁阻元件的自由层的磁化方向的角度的绝对值与它们的钉扎层相同。 所公开的磁偏置方案使得能够将单个芯片上的推挽惠斯通电桥磁场传感器与传统的磁阻传感器设计相比具有更好的性能，更低的成本和更易于制造的能力。

公开(公告)号：EP4455685A1

公开(公告)日：2024-10-30

申请号：EP22909595.5

申请日：2022-11-17

申请人： MultiDimension Technology Co., Ltd.

发明人： LIU, Mingfeng ,  SHI, Ran ,  XUE, Songsheng

IPC分类号： G01R19/00

摘要： Provided is a current sensor, an input module thereof comprising a differential copper bar (1) and a shunt copper bar (2), connected in parallel. A current to be measured flows through the differential copper bar (1) and the shunt copper bar (2), and a magnetic field is generated at positions of high and low current detection modules (3, 4). In the high current detection module (3), a first magnetic induction module is secured on a circuit board (5) and placed in an internal gap of the input module, and the first magnetic induction module at least comprises first and second magnetic induction units (311, 312), the first and second magnetic induction units (311, 312) differentially sensing a magnetic field of the input module and forming an output signal by means of a first signal output module (32). In the low current detection module (4), a second magnetic induction module is secured on a circuit board (5) and placed outside the input module, and the second magnetic induction module at least comprises third and fourth magnetic induction units (411, 412), which differentially sense the magnetic field of the input module and form an output signal by means of a second signal output module (42). The current measurement range can be increased.

公开(公告)号：EP4455683A1

公开(公告)日：2024-10-30

申请号：EP22909593.0

申请日：2022-11-17

申请人： MultiDimension Technology Co., Ltd.

发明人： LIU, Mingfeng ,  SHI, Ran ,  XUE, Songsheng

IPC分类号： G01R19/00 ,  G01R15/20

摘要： A current sensor comprises a to-be-measured current input component composed of a first current shunting copper bar (11), a second current shunting copper bar (21) and a differential copper bar (31) that are arranged in the same direction respectively; and a signal output component composed of a substrate (51) and a magnetic induction module (41) fixed on the substrate (51). The signal output component is electrically isolated from said current input component. Current to be measured flows through a cross section perpendicular to the first current shunting copper bar (11), the second current shunting copper bar (21), and the differential copper bar (31), and generates a magnetic field at the position of the magnetic induction module (41). The magnetic induction module (41) at least comprises a first magnetic induction unit (411) and a second magnetic induction unit (421). The two magnetic induction units (411, 412) are located between the different copper bar (31) and the first current shunting copper bar (11), sense, in a differential manner, a differential mode magnetic field generated by said current input component, and generate a differential voltage signal to form an output signal of the current sensor. Thus high precision, adjustable and large current measurement range of the advantage of this current sensor are realized.

公开(公告)号：EP4414719A1

公开(公告)日：2024-08-14

申请号：EP22877848.6

申请日：2022-09-14

申请人： MultiDimension Technology Co., Ltd.

发明人： QU, Pin ,  XUE, Songsheng ,  ZHANG, Jiuyuan

IPC分类号： G01R19/00

摘要： The embodiments of the present invention disclose a current sensor. The current sensor comprises a current conductor to be measured which comprises a first conductor section and a second conductor section with identical shapes. An area enclosed by the extended shape of the first conductor section and the second conductor section is a U shape, and the two conductor sections are symmetrically distributed about a geometric center line of the current conductor to be measured. A first magnetic sensor group is arranged at one or two sides of the first conductor section. A second magnetic sensor group is also arranged at one or two sides of the first conductor section. These two magnetic sensor groups are symmetrically distributed about the geometric center line of the current conductor to be measured and have the same sensing directions. All sides are enclosed by a shielding cover, and the shielding cover is placed in a housing made of insulating material that wraps the current conductor to be measured, the first magnetic sensor group, the second magnetic sensor group, and a signal processor and a circuit board. The current sensor provided by the embodiments of the present invention is small in size, has strong interference immunity, wide measurement range, low temperature drift, high frequency response, and high measurement precision.