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    SINGLE-CHIP TWO-AXIS BRIDGE-TYPE MAGNETIC FIELD SENSOR
    1.
    发明授权
    SINGLE-CHIP TWO-AXIS BRIDGE-TYPE MAGNETIC FIELD SENSOR 有权

    公开(公告)号：EP2696210B1

    公开(公告)日：2018-07-25

    申请号：EP12767837.3

    申请日：2012-05-23

    申请人： MultiDimension Technology Co., Ltd

    发明人： DEAK, James Geza ,  JIN, Insik ,  SHEN, Weifeng ,  LEI, Xiaofeng ,  XUE, Songsheng

    IPC分类号： G01R33/09 ,  G01B7/30 ,  G01D5/16 ,  H01L43/08 ,  G01R33/00 ,  G01R33/02 ,  H01L43/02

    CPC分类号： G01R33/098

    摘要： The present invention discloses a design for a single-chip dual-axis magnetic field sensor, based on magnetic tunnel junction (MTJ) elements and permanent magnets integrated on a semiconductor substrate to produce two types of sensor bridges that detect orthogonal magnetic field components. The orthogonal magnetic field component detection capability results from the different types of sensor bridges that can be produced by varying the shape of the MTJ elements and the bias fields that can be created by permanent magnets. Because the permanent magnets can create orthogonal bias fields on the different sensor bridges, it is possible to use a single pinned layer to set direction for both sensor bridges. This is advantageous because it permits the two-axis sensor to be fabricated on a single semiconductor chip without the need for specialized processing technology such as local heating, or deposition of multiple magnetoresistive films with different pinned layers setting directions

    SHORT-DISTANCE MAGNETORESISTANCE IMAGING SENSOR ARRAY
    2.
    发明公开
    SHORT-DISTANCE MAGNETORESISTANCE IMAGING SENSOR ARRAY 审中-公开
    BILDSENSORARRAY-MAGNETWIDERSTAND MIT KURZER REICHWEITE

    公开(公告)号：EP3091363A1

    公开(公告)日：2016-11-09

    申请号：EP14876525.8

    申请日：2014-12-29

    申请人： Multidimension Technology Co., Ltd.

    发明人： TONDRA, Mark C ,  XUE, Songsheng ,  DEAK, James Geza ,  JIN, Insik ,  SHEN, Weifeng

    IPC分类号： G01R33/09

    CPC分类号： G01R33/091 ,  G01R33/072 ,  G01R33/09 ,  G06K9/186 ,  G06K9/209

    摘要： A low profile magnetoresistive imaging sensor array (71) based on the principle of magnetic induction, which reduces a distance (98) between a medium imaging sensor array (71) and a medium (10) by optimizing the arrangement of an application integrated circuit and a sensing element array and using an electric connection technology which can reduce the distance (98) between the medium imaging sensor array (71) and the medium (10), thereby increasing the resolution of the existing medium imaging sensor. The low profile magnetoresistive imaging sensor array (71) comprises a sensing element array and an application integrated circuit, and also comprises a circuit which provides a power for the sensing element array, a magnetoresistive sensing element array selection circuit, a signal amplification circuit, a digitizer, a memory circuit, and a microprocessor. Additionally, the sensing element array comprises at least one magnetoresistive sensing element.

    摘要翻译： 一种基于磁感应原理的低剖面磁阻成像传感器阵列（71），其通过优化应用集成电路的布置来减小介质成像传感器阵列（71）和介质（10）之间的距离（98） 感测元件阵列，并且使用可以减小介质成像传感器阵列（71）和介质（10）之间的距离（98）的电连接技术，从而提高现有介质成像传感器的分辨率。 薄型磁阻成像传感器阵列（71）包括感测元件阵列和应用集成电路，并且还包括为感测元件阵列提供电力的电路，磁阻感测元件阵列选择电路，信号放大电路， 数字转换器，存储器电路和微处理器。 另外，感测元件阵列包括至少一个磁阻感测元件。

    SINGLE-CHIP REFERENCE FULL-BRIDGE MAGNETIC FIELD SENSOR
    3.
    发明公开
    SINGLE-CHIP REFERENCE FULL-BRIDGE MAGNETIC FIELD SENSOR 审中-公开
    VOLLBRÜCKEN-MAGNETFELDSENSOR MIT EINZELCHIPREFERENZ

    公开(公告)号：EP2700968A1

    公开(公告)日：2014-02-26

    申请号：EP12773589.2

    申请日：2012-04-06

    申请人： Jiangsu MultiDimension Technology Co. Ltd

    发明人： DEAK, James, Geza ,  JIN, Insik ,  SHEN, Weifeng ,  XUE, Songsheng ,  LEI, Xiaofeng

    IPC分类号： G01R33/09

    CPC分类号： H01L43/02 ,  G01R33/098

    摘要： The present invention discloses a single-chip referenced full-bridge magnetoresistive magnetic-field sensor. The single-chip sensor is a Wheatstone bridge arrangement of magnetoresistive sensing elements and reference elements. The sensing elements and reference elements are formed from either magnetic tunnel junctions or giant magnetoresistive materials. The sensitivity of the reference and sensor elements is controlled through one or a combination of magnetic bias, exchange bias, shielding, or shape anisotropy. Moreover, the bridge output is tuned by setting the ratio of the reference and sensor arm resistance values to a predetermined ratio that optimizes the bridge output for offset and symmetry. The single-chip referenced-bridge magnetic field sensor of the present invention exhibits excellent temperature stability, low offset voltage, and excellent voltage symmetry.

    摘要翻译： 本发明公开了一种单芯片参考全桥磁阻磁场传感器。 单芯片传感器是一种惠斯登电桥布置的磁阻感测元件和参考元件。 传感元件和参考元件由磁隧道结或巨磁阻材料形成。 参考和传感器元件的灵敏度通过磁偏置，交换偏压，屏蔽或形状各向异性的一种或组合来控制。 此外，通过将参考电缆和传感器臂电阻值的比率设置为优化桥接输出的偏移和对称性的预定比率来调节桥输出。 本发明的单芯片参考桥磁场传感器表现出优异的温度稳定性，低失调电压和优异的电压对称性。

    SINGLE-CHIP TWO-AXIS BRIDGE-TYPE MAGNETIC FIELD SENSOR
    4.
    发明公开
    SINGLE-CHIP TWO-AXIS BRIDGE-TYPE MAGNETIC FIELD SENSOR 有权
    爱尔兰电力公司 - 瑞典电磁感应器

    公开(公告)号：EP2696210A2

    公开(公告)日：2014-02-12

    申请号：EP12767837.3

    申请日：2012-05-23

    申请人： Jiangsu MultiDimension Technology Co. Ltd

    发明人： DEAK, James Geza ,  JIN, Insik ,  SHEN, Weifeng ,  LEI, Xiaofeng ,  XUE, Songsheng

    IPC分类号： G01R33/09

    CPC分类号： G01R33/098

    摘要： The present invention discloses a design for a single-chip dual-axis magnetic field sensor, based on magnetic tunnel junction (MTJ) elements and permanent magnets integrated on a semiconductor substrate to produce two types of sensor bridges that detect orthogonal magnetic field components. The orthogonal magnetic field component detection capability results from the different types of sensor bridges that can be produced by varying the shape of the MTJ elements and the bias fields that can be created by permanent magnets. Because the permanent magnets can create orthogonal bias fields on the different sensor bridges, it is possible to use a single pinned layer to set direction for both sensor bridges. This is advantageous because it permits the two-axis sensor to be fabricated on a single semiconductor chip without the need for specialized processing technology such as local heating, or deposition of multiple magnetoresistive films with different pinned layers setting directions

    摘要翻译： 本发明公开了一种基于集成在半导体衬底上的磁隧道结（MTJ）元件和永磁体的单芯片双轴磁场传感器的设计，以产生检测正交磁场分量的两种传感器桥。 正交磁场成分检测能力来自可以通过改变MTJ元件的形状和可由永磁体产生的偏置场来产生的不同类型的传感器桥。 因为永磁体可以在不同的传感器桥上产生正交偏置场，所以可以使用单个固定层来设置两个传感器桥的方向。 这是有利的，因为它允许将双轴传感器制造在单个半导体芯片上，而不需要专门的处理技术，例如局部加热或沉积具有不同钉扎层的多个磁阻膜设置方向

    INDIVIDUALLY PACKAGED MAGNETORESISTANCE ANGLE SENSOR
    5.
    发明公开
    INDIVIDUALLY PACKAGED MAGNETORESISTANCE ANGLE SENSOR 审中-公开
    EINZELN VERPACKTER MAGNETORESISTIVER WINKELSENSOR

    公开(公告)号：EP2682772A1

    公开(公告)日：2014-01-08

    申请号：EP12751985.8

    申请日：2012-03-02

    申请人： Jiangsu MultiDimension Technology Co. Ltd

    发明人： DEAK, James Geza ,  SHEN, Weifeng ,  WANG, Jianguo ,  ZHANG, Xiaojun ,  LEI, Xiaofeng ,  JIN, Insik ,  XUE, Songsheng

    IPC分类号： G01R33/09 ,  G01B7/30 ,  G01D5/16 ,  H01L43/08

    CPC分类号： G01R33/098 ,  B82Y25/00 ,  G01B7/30 ,  G01D5/145 ,  G01R33/093 ,  H01L43/08

    摘要： A single package magnetoresistive angle sensor for use in measuring rotation angle of a magnet is disclosed. The magnetoresistive angle sensor comprises a pair of magnetoresistive sensor chips, wherein one of the chips is rotated by 180-degree rotation relative to the other. The magnetoresistive sensor chips are attached to a standard semiconductor package lead frame to form a single-axis push-pull full-bridge sensor. Each of the magnetoresistive sensor chips comprises a pair of magneto resistance sensor arms. Each magnetoresistive sensor arm comprises one or more GMR or MTJ sensor elements. The GMR of MTR sensor elements utilize a pined layer. The element blocks of the magnetoresistive sensor electrically are interconnected and connected to the package leads by wirebonding. The magnetoresistive angle sensor can be packaged into various standard semiconductor package designs. Also, provided is a dual-axis push-pull full-bridge magnetoresistive angle sensor comprised of two pairs of magnetoresistive sensor chips.

    摘要翻译： 公开了一种用于测量磁体旋转角度的单封装磁阻角传感器。 磁阻角传感器包括一对磁阻传感器芯片，其中一个芯片相对于另一个旋转180度旋转。 磁阻传感器芯片附接到标准半导体封装引线框架以形成单轴推挽全桥传感器。 每个磁阻传感器芯片包括一对磁阻传感器臂。 每个磁阻传感器臂包括一个或多个GMR或MTJ传感器元件。 MTR传感器元件的GMR利用了一个打浆层。 电阻传感器的元件块电连接并通过引线接合连接到封装引线。 磁阻角传感器可以封装成各种标准的半导体封装设计。 此外，提供了由两对磁阻传感器芯片组成的双轴推挽全桥磁阻角度传感器。

    PUSH-PULL BRIDGE MAGNETORESISTANCE SENSOR
    6.
    发明公开
    PUSH-PULL BRIDGE MAGNETORESISTANCE SENSOR 审中-公开
    MAGNETORESISTIVER传感器麻省理工学院/ZUGBRÜCKE

    公开(公告)号：EP2682771A1

    公开(公告)日：2014-01-08

    申请号：EP12751762.1

    申请日：2012-03-02

    申请人： Jiangsu MultiDimension Technology Co. Ltd

    发明人： DEAK, James Geza ,  JIN, Insik ,  SHEN, Weifeng ,  WANG, Jianguo ,  XUE, Songsheng ,  LEI, Xiaofeng ,  ZHANG, Xiaojun ,  LI, Dongfeng

    IPC分类号： G01R33/09

    CPC分类号： H01L25/04 ,  G01R33/093 ,  G01R33/098 ,  H01L43/02 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48464 ,  H01L2924/00014

    摘要： A multi-chip push-pull magnetoresistive bridge sensor utilizing magnetic tunnel junctions is disclosed. The magnetoresistive bridge sensor is composed of a two or more magnetic tunnel junction sensor chips placed in a semiconductor package. For each sensing axis parallel to the surface of the semiconductor package, the sensor chips are aligned with their reference directions in opposition to each other. The sensor chips are then interconnected as a push-pull half-bridge or Wheatstone bridge using wire bonding. The chips are wire-bonded to any of various standard semiconductor lead frames and packaged in inexpensive standard semiconductor packages.

    摘要翻译： 公开了一种利用磁隧道结的多芯片推挽磁阻桥式传感器。 磁阻桥式传感器由放置在半导体封装中的两个或多个磁性隧道结传感器芯片组成。 对于平行于半导体封装的表面的每个感测轴，传感器芯片彼此相对对准其参考方向。 然后将传感器芯片作为推挽半桥或使用引线接合的惠斯通电桥进行互连。 这些芯片被引线接合到各种标准半导体引线框架中的任何一个并且封装在廉价的标准半导体封装中。

    SINGLE CHIP BRIDGE MAGNETIC FIELD SENSOR AND PREPARATION METHOD THEREOF
    10.
    发明公开
    SINGLE CHIP BRIDGE MAGNETIC FIELD SENSOR AND PREPARATION METHOD THEREOF 审中-公开
    EINZELCHIPBRÜCKEN-MAGNETFELDSENSOR UND HERSTELLUNGSVERFAHRENDAFÜR

    公开(公告)号：EP2696211A1

    公开(公告)日：2014-02-12

    申请号：EP12767908.2

    申请日：2012-04-01

    申请人： Jiangsu MultiDimension Technology Co. Ltd

    发明人： LEI, Xiaofeng ,  JIN, Insik ,  DEAK, James Geza ,  SHEN, Weifeng ,  LIU, Mingfeng ,  XUE, Songsheng

    IPC分类号： G01R33/09 ,  G01B7/30 ,  G11B5/39

    CPC分类号： H01L43/12 ,  B82Y10/00 ,  G01B7/30 ,  G01R33/0052 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3993 ,  G11B2005/3996 ,  H01L43/02 ,  H01L43/08

    摘要： The present invention discloses a design and manufacturing method for a single-chip magnetic sensor bridge. The sensor bridge comprises four magnetoresistive elements. The magnetization of the pinned layer of each of the four magnetoresistive elements is set in the same direction, but the magnetization directions of the free layers of the magnetoresistive elements on adjacent arms of the bridge are set at different angles with respect to the pinned layer magnetization direction. The absolute values of the angles of the magnetization directions of the free layers of all four magnetoresistive elements are the same with respect with their pinning layers. The disclosed magnetic biasing scheme enables the integration of a push-pull Wheatstone bridge magnetic field sensor on a single chip with better performance, lower cost, and easier manufacturability than conventional magnetoresistive sensor designs.

    摘要翻译： 本发明公开了一种单芯片磁传感器桥的设计和制造方法。 传感器桥包括四个磁阻元件。 四个磁阻元件中的每一个的被钉扎层的磁化被设置在相同的方向上，但是桥接件的相邻臂上的磁阻元件的自由层的磁化方向相对于被钉扎层的磁化被设定在不同的角度 方向。 所有四个磁阻元件的自由层的磁化方向的角度的绝对值与它们的钉扎层相同。 所公开的磁偏置方案使得能够将单个芯片上的推挽惠斯通电桥磁场传感器与传统的磁阻传感器设计相比具有更好的性能，更低的成本和更易于制造的能力。