Applicable like semiconductor transistor, forming the oxide. After supplying a sputtering gas having an oxygen and / or noble gases into the deposition chamber, by applying a potential difference between the target and the substrate, to generate a plasma having ions of the deposition gas, the ions of the deposition gas by the potential difference, are accelerated towards the target, that ions of the deposition gas to bombard the target, a collection of atoms or atoms constituting the target from the target is peeled off, a collection of atoms and atoms, on a substrate deposited, causing migration by heating the substrate to form a plurality of plate-like clusters, in the region between the clusters each other, atoms, and a collection of atoms enters, atom, and a collection of atoms, flat by growing the area between shaped for clusters in the lateral direction, the connecting portion is formed between the clusters to each other, the crystal structure having a distortion in the connecting portion It is formed.