一种用于阻抗匹配及电性互连的硅穿孔结构，系包括双层之导电组件，且其中一导电组件为顶宽底窄的实心柱体，本发明之硅穿孔结构用于提供芯片或基板间的阻抗匹配及电性互连，能够在3D集成电路的电性互连之间有效地达到阻抗匹配的效果，借由调整硅穿孔结构的相应关键尺寸，提供有效的阻抗转换效果，降低在不同的芯片或基板之间可能因具有不同的输入/输出阻抗而必须额外设置阻抗转换器的成本，同时利用填充不同介电材料于该二导电组件之间来降低串音与噪声。

Disclosed is a through silicon via structure for impedance matching and electrical interconnection composed of a plurality of dual-layered conductive elements, wherein one of the conductive element is a solid pillar body having a wide top and a narrow bottom. The through silicone via structure of the invention can provide the effects of matching resistance and an electrical interconnection between the chip and the substrate of 3D integrated circuit by adjusting the corresponding size thereof, thereby achieving input/output resistance conversion between different chips or substrates to eliminate the need of disposing an additional resistance converter, and also strings of sounds and signal noises can be reduce by filling different dielectric materials between the two conductive elements.