一种电阻式随机存取内存之记忆胞及其制造方法。所述方法包括形成第一电极。在第一电极上形成金属氧化物层。在金属氧化物层上形成电极缓冲叠层，其中电极缓冲叠层包括第一缓冲层以及第二缓冲层，第一缓冲层位于金属氧化物层与第二缓冲层之间，第一缓冲层相对地不易与金属氧化物层产生氧化反应，且第二缓冲层相对地容易与金属氧化层产生氧化反应。在电极缓冲叠层上形成第二电极。

A memory cell of a resistive random access memory and a manufacturing method thereof are provided. The method includes the following steps. A first electrode is formed. A metal oxide layer is formed on the first electrode. An electrode buffer stacked layer is formed on the metal oxide layer and includes a first buffer layer and a second buffer layer, and the first buffer layer is between the second buffer layer and the metal oxide layer. An oxidation reaction between the second buffer layer and the metal oxide layer is relatively easier than an oxidation reaction between the first buffer layer and the metal oxide layer. A second electrode layer is formed on the electrode buffer stacked layer.