本揭露系关于一种半导体设备及其制造方法，其使用一单一遮罩以形成用于贯穿基板导孔与贯穿介电质导孔的开口。在一实施例中，一接触蚀刻停止层沉积于第一半导体设备与第二半导体设备上以及之间。一介电材料沉积于位于第一半导体设备与第二半导体设备之间的接触蚀刻停止层上。接触蚀刻停止层与介电材料使用不同的材料，因此一单一遮罩可用来形成穿过第一半导体设备的贯穿基板导孔，以及形成穿过介电材料的贯穿介电质导孔。

A semiconductor device and method are provided which utilizes a single mask to form openings for both a through substrate via as well as for a through dielectric via. In an embodiment a contact etch stop layer is deposited over and between a first semiconductor device and a second semiconductor device. A dielectric material is deposited over the contact etch stop layer between the first semiconductor device and the second semiconductor device. The different materials of the contact etch stop layer and the dielectric material is utilized such that a single mask may be used to form a through substrate via through the first semiconductor device and also to form a through dielectric via through the dielectric material.