本发明实施例系关于一种半导体影像传感器设备，其包含一半导体基板、一辐射传感区及一第一隔离结构。该辐射传感区在该半导体基板中。该第一隔离结构在该半导体基板中且邻近于该辐射传感区。该第一隔离结构包含在该半导体基板中之一底部隔离部分、在该半导体基板中之一上隔离部分，及包围该上隔离部分之一侧壁的一扩散阻障层。

A semiconductor image sensor device includes a semiconductor substrate, a radiation-sensing region, and a first isolation structure. The radiation-sensing region is in the semiconductor substrate. The first isolation structure is in the semiconductor substrate and adjacent to the radiation-sensing region. The first isolation structure includes a bottom isolation portion in the semiconductor substrate, an upper isolation portion in the semiconductor substrate, and a diffusion barrier layer surrounding a sidewall of the upper isolation portion.