Invention Grant
- Patent Title: Encapsulation of magnetic tunnel junction structures in organic photopatternable dielectric material
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Application No.: US15403851Application Date: 2017-01-11
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Publication No.: US10002904B2Publication Date: 2018-06-19
- Inventor: Anthony J. Annunziata , Chandrasekharan Kothandaraman , Qinghuang Lin
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Vazken Alexanian
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; H01L43/12 ; H01L43/08 ; G11C11/16 ; H01L43/10

Abstract:
Methods and devices are provided to construct magnetic devices, such as magnetic random access memory devices, having MTJ (magnetic tunnel junction) structures encapsulated in organic photopatternable dielectric material. For example, a method includes forming an MTJ structure on a semiconductor substrate, encapsulating the MTJ structure in a layer of organic photopatternable dielectric material, patterning the layer of organic photopatternable dielectric material to form a contact opening in the layer of organic photopatternable dielectric material to the MTJ structure, and filling the contact opening with metallic material.
Public/Granted literature
- US20170162626A1 ENCAPSULATION OF MAGNETIC TUNNEL JUNCTION STRUCTURES IN ORGANIC PHOTOPATTERNABLE DIELECTRIC MATERIAL Public/Granted day:2017-06-08
Information query
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