Invention Grant
- Patent Title: Complementary magnetic tunnel junction (MTJ) bit cell with shared bit line
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Application No.: US14744984Application Date: 2015-06-19
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Publication No.: US10008537B2Publication Date: 2018-06-26
- Inventor: Xia Li , Xiaochun Zhu , Yu Lu
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC.
- Main IPC: G11C11/15
- IPC: G11C11/15 ; H01L27/22 ; H01L43/02 ; H01L43/08 ; G11C11/16 ; H01L43/12
Abstract:
A complementary bit cell includes a first magnetic tunnel junction (MTJ) device having a free layer coupled to a first access transistor and having a pinned layer coupled to a bit line. The complementary bit cell also includes a second MTJ device having a free layer coupled to the same bit line and having a pinned layer coupled to a second access transistor.
Public/Granted literature
- US20160372518A1 BIT CELL WITH SHARED BIT LINE Public/Granted day:2016-12-22
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