Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US15443498Application Date: 2017-02-27
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Publication No.: US10020231B2Publication Date: 2018-07-10
- Inventor: Chan-Hee Jeon , Eun-Kyoung Kwon , Il-Ryong Kim , Han-Gu Kim , Woo-Jin Seo , Ki-Tae Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2013-0079824 20130708
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/092 ; H01L29/08 ; H01L29/16 ; H01L29/161 ; H01L29/165 ; H01L29/78 ; H01L23/535 ; H01L21/02 ; H01L21/768 ; H01L21/266 ; H01L27/02 ; H01L27/11
Abstract:
In one embodiment, the semiconductor device includes at least one active fin protruding from a substrate, a first gate electrode crossing the active fin, and a first impurity region formed on the active fin at a first side of the first gate electrode. At least a portion of the first impurity region is formed in a first epitaxial layer portion on the active fin. A second impurity region is formed on the active fin at a second side of the first gate electrode. The second impurity region has at least a portion not formed in an epitaxial layer.
Public/Granted literature
- US20170170075A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-06-15
Information query
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