- 专利标题： Apparatus with 3D wirewound inductor integrated within a substrate
-
申请号： US15160776申请日： 2016-05-20
-
公开(公告)号： US10026546B2公开(公告)日： 2018-07-17
- 发明人: Changhan Hobie Yun , Chengjie Zuo , Daeik Daniel Kim , Mario Francisco Velez , Niranjan Sunil Mudakatte , Jonghae Kim , David Francis Berdy
- 申请人： QUALCOMM Incorporated
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM Incorported
- 当前专利权人： QUALCOMM Incorported
- 当前专利权人地址： US CA San Diego
- 代理机构： Qualcomm Incorporated-Toler
- 主分类号： H03H7/46
- IPC分类号： H03H7/46 ; H01F27/40 ; H01F27/28 ; H01F27/29 ; H01F41/02 ; H03H7/01
摘要：
An apparatus includes a substrate and a three-dimensional (3D) wirewound inductor integrated within the substrate. The apparatus further includes a capacitor coupled to the 3D wirewound inductor.
公开/授权文献
信息查询
IPC分类:
