Invention Grant
- Patent Title: Method for producing group III nitride crystal, group III nitride crystal, semiconductor device and apparatus for producing group III nitride crystal
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Application No.: US15028341Application Date: 2014-10-08
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Publication No.: US10026612B2Publication Date: 2018-07-17
- Inventor: Yusuke Mori , Mamoru Imade , Masashi Yoshimura , Masashi Isemura
- Applicant: OSAKA UNIVERSITY , ITOCHU PLASTICS INC.
- Applicant Address: JP Osaka JP Tokyo
- Assignee: Osaka University,Itochu Plastics Inc.
- Current Assignee: Osaka University,Itochu Plastics Inc.
- Current Assignee Address: JP Osaka JP Tokyo
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2013-212197 20131009
- International Application: PCT/JP2014/076998 WO 20141008
- International Announcement: WO2015/053341 WO 20150416
- Main IPC: C30B25/02
- IPC: C30B25/02 ; H01L21/02 ; C30B25/14 ; C23C16/30 ; C23C16/448 ; C30B25/00 ; C30B29/40 ; C23C16/22 ; H01L29/20 ; H01L29/32
Abstract:
The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.
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