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1.发明申请METHOD FOR PRODUCING GROUP-III NITRIDE CRYSTAL, GROUP-III NITRIDE CRYSTAL, SEMICONDUCTOR DEVICE, AND DEVICE FOR PRODUCING GROUP-III NITRIDE CRYSTAL 审中-公开用于生产III族氮化物晶体，III族氮化物晶体，半导体器件和用于生产III族氮化物晶体的器件的方法公开(公告)号：US20170073839A1
公开(公告)日：2017-03-16
申请号：US15123556
申请日：2015-02-26
发明人： Yusuke MORI , Masashi YOSHIMURA , Mamoru IMADE , Masashi ISEMURA , Akira USUI , Masatomo SHIBATA , Takehiro YOSHIDA
IPC分类号： C30B29/40 , C30B19/06 , C30B25/18 , C30B25/20 , C30B33/00 , B28D5/00 , H01L21/78 , H01L33/00 , H01L33/12 , H01L33/32 , H01L29/20 , C30B19/02 , H01L21/02
CPC分类号： C30B29/406 , B28D5/00 , C30B19/02 , C30B19/061 , C30B25/186 , C30B25/20 , C30B29/38 , C30B33/00 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02625 , H01L21/02642 , H01L21/02647 , H01L21/7813 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/32 , H01S5/3013 , H01S2304/06
摘要： A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.
摘要翻译： 通过气相外延生产出具有很少缺陷（例如变形，位错和翘曲）的高质量的大的III族氮化物晶体。 制造III族氮化物晶体的方法包括：通过液相外延生产第一III族氮化物晶体1003的第一III族氮化物晶体制造工艺; 以及通过气相外延在第一晶体1003上制造第二III族氮化物晶体1004的第二III族氮化物晶体制造方法。 在第一III族氮化物晶体制造方法中，使晶种1003a（预先设置的III族氮化物）的表面与碱金属熔体，III族元素和氮相互接触， 在碱金属熔体中含有气氛，并且通过从种子晶体1003a生长的III族氮化物晶体的生长将III族氮化物晶体结合在一起，以产生第一晶体1003。
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公开(公告)号：US10026612B2
公开(公告)日：2018-07-17
申请号：US15028341
申请日：2014-10-08
发明人： Yusuke Mori , Mamoru Imade , Masashi Yoshimura , Masashi Isemura
IPC分类号： C30B25/02 , H01L21/02 , C30B25/14 , C23C16/30 , C23C16/448 , C30B25/00 , C30B29/40 , C23C16/22 , H01L29/20 , H01L29/32
摘要： The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.
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3.发明申请METHOD FOR PRODUCING GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYSTAL, SEMICONDUCTOR DEVICE AND APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL 有权用于生产III族氮化物晶体，III族氮化物晶体，半导体器件的方法和用于生产III族氮化物晶体的装置公开(公告)号：US20160268129A1
公开(公告)日：2016-09-15
申请号：US15028341
申请日：2014-10-08
发明人： Yusuke MORI , Mamoru IMADE , Masashi YOSHIMURA , Masashi ISEMURA
CPC分类号： H01L21/02645 , C23C16/22 , C23C16/303 , C23C16/4488 , C30B25/00 , C30B25/02 , C30B25/14 , C30B29/403 , H01L21/0237 , H01L21/0254 , H01L21/02576 , H01L21/0262 , H01L21/02639 , H01L29/2003 , H01L29/32
摘要： The present invention is intended to provide a method of producing a Group III nitride crystal that prevents a halogen-containing by-product from adversely affecting crystal generation and is superior in reactivity and operability. A method of producing a Group III nitride crystal includes a step of causing a Group III metal to react with an oxidizing gas and nitrogen-containing gas, thereby producing a Group III nitride crystal.
摘要翻译： 本发明旨在提供一种防止含卤素副产物不利地影响晶体生成并且具有优异的反应性和可操作性的III族氮化物晶体的制造方法。 制造III族氮化物晶体的方法包括使III族金属与氧化气体和含氮气体反应的步骤，从而产生III族氮化物晶体。
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公开(公告)号：US20170321348A1
公开(公告)日：2017-11-09
申请号：US15523163
申请日：2015-10-28
申请人： OSAKA UNIVERSITY , ITOCHU PLASTICS INC. , National University Corp Tokyo University of Agriculture and Technology
CPC分类号： C30B29/406 , C23C16/34 , C30B9/02 , C30B25/02 , C30B25/14 , C30B25/20 , H01L21/0254 , H01L21/0262 , H01L21/205 , H01L29/2003 , H01L33/32
摘要： To provide a method for producing a Group III element nitride crystal by growing it on a plane on the −c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12. The crystal growth plane is a plane on the −c-plane side. A crystal growth temperature is 1200° C. or more. In the vapor phase growth step, the Group III element nitride crystal is grown in an approximately −c direction.
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公开(公告)号：US10266965B2
公开(公告)日：2019-04-23
申请号：US15123556
申请日：2015-02-26
发明人： Yusuke Mori , Masashi Yoshimura , Mamoru Imade , Masashi Isemura , Akira Usui , Masatomo Shibata , Takehiro Yoshida
IPC分类号： C30B19/02 , C30B29/40 , C30B25/20 , C30B29/38 , H01L21/02 , B28D5/00 , C30B19/06 , C30B25/18 , C30B33/00 , H01L21/78 , H01L29/20 , H01L33/00 , H01L33/12 , H01L33/32 , H01S5/30
摘要： A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.
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6.发明申请PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL AND APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL 审中-公开生产第三类氮化物晶体的方法和用于生产第三类氮化物晶体的装置公开(公告)号：US20170073840A1
公开(公告)日：2017-03-16
申请号：US15123565
申请日：2015-03-03
IPC分类号： C30B29/40 , C30B19/12 , C30B25/20 , C30B25/18 , C30B29/20 , B28D5/00 , H01L21/02 , H01L21/78 , H01L33/00 , H01L33/12 , H01L33/32 , H01L29/20 , C30B19/02 , C30B33/00
CPC分类号： C30B29/406 , B28D5/00 , C30B19/02 , C30B19/12 , C30B25/186 , C30B25/20 , C30B29/20 , C30B29/38 , C30B33/00 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02516 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L21/02625 , H01L21/02639 , H01L21/02647 , H01L21/7813 , H01L29/2003 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/32 , H01S5/3013 , H01S2304/06
摘要： A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.
摘要翻译： 通过气相外延生产出具有很少缺陷（例如变形，位错和翘曲）的高质量的大的III族氮化物晶体。 制造III族氮化物晶体的方法包括：通过液相外延生产第一III族氮化物晶体1003的第一III族氮化物晶体制造工艺; 以及通过使III族元素金属与氧化剂和含氮气体反应，通过气相外延在第一晶体1003上制造第二III族氮化物晶体1004的第二III族氮化物晶体制造方法。 在第一III族氮化物晶体制造方法中，使晶种1003a（预先设置的III族氮化物）的表面与碱金属熔体，III族元素和氮相互接触， 在碱金属熔体中含有气氛，并且通过从种子晶体1003a生长的III族氮化物晶体的生长将III族氮化物晶体结合在一起，以产生第一晶体1003。
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公开(公告)号：US10202710B2
公开(公告)日：2019-02-12
申请号：US15123565
申请日：2015-03-03
IPC分类号： C30B29/40 , C30B19/02 , C30B25/20 , C30B29/38 , C30B33/00 , H01L21/02 , B28D5/00 , C30B19/12 , C30B25/18 , C30B29/20 , H01L21/78 , H01L29/20 , H01L33/00 , H01L33/12 , H01L33/32 , H01S5/30
摘要： A large Group III nitride crystal of high quality with few defects such as a distortion, a dislocation, and warping is produced by vapor phase epitaxy. A method for producing a Group III nitride crystal includes: a first Group III nitride crystal production process of producing a first Group III nitride crystal 1003 by liquid phase epitaxy; and a second Group III nitride crystal production process of producing a second Group III nitride crystal 1004 on the first crystal 1003 by vapor phase epitaxy by causing a Group III element metal to react with an oxidizing agent and nitrogen-containing gas. In the first Group III nitride crystal production process, the surfaces of seed crystals 1003a (preliminarily provided Group III nitride) are brought into contact with an alkali metal melt, a Group III element and nitrogen are cause to react with each other in a nitrogen-containing atmosphere in the alkali metal melt, and the Group III nitride crystals are bound together by growth of the Group III nitride crystals grown from the seed crystals 1003a to produce a first crystal 1003.
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公开(公告)号：US10011921B2
公开(公告)日：2018-07-03
申请号：US15523163
申请日：2015-10-28
申请人： OSAKA UNIVERSITY , ITOCHU PLASTICS INC. , National University Corporation Tokyo University of Agriculture and Technology
CPC分类号： C30B29/406 , C23C16/34 , C30B9/02 , C30B25/02 , C30B25/14 , C30B25/20 , H01L21/0254 , H01L21/0262 , H01L21/205 , H01L29/2003 , H01L33/32
摘要： To provide a method for producing a Group III element nitride crystal by growing it on a plane on the −c-plane side as a crystal growth plane. The present invention is a method for producing a Group III element nitride crystal, including a vapor phase growth step of growing a Group III element nitride crystal 12 on a crystal growth plane of a Group III element nitride seed crystal 11 by vapor deposition. The vapor phase growth step is a step of causing a Group III metal, an oxidant, and a nitrogen-containing gas to react with one another to grow the Group III element nitride crystal 12 or includes: a reduced product gas generation step of causing a Group III element oxide and a reducing gas to react with each other to generate a gas of a reduced product of the Group III element oxide; and a crystal generation step of causing the gas of the reduced product and a nitrogen-containing gas to react with each other to generate the Group III element nitride crystal 12. The crystal growth plane is a plane on the −c-plane side. A crystal growth temperature is 1200° C. or more. In the vapor phase growth step, the Group III element nitride crystal is grown in an approximately −c direction.
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9.发明申请公开(公告)号：US20180094361A1
公开(公告)日：2018-04-05
申请号：US15724909
申请日：2017-10-04
发明人： Yusuke MORI , Masashi YOSHIMURA , Mamoru IMADE , Masayuki IMANISHI , Akira KITAMOTO , Masashi ISEMURA
CPC分类号： C30B29/403 , C30B25/165 , C30B25/18 , H01L21/02389 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： The present invention provides a method for producing a Group III nitride crystal that can produce a Group III nitride crystal of high quality with few defects such as crack, dislocation, and the like by vapor phase epitaxy. In order to achieve the above object, the method for producing a Group III nitride crystal of the present invention includes a step of: causing Group III element-containing gas 111a to react with nitrogen-containing gas 203a and 203b to generate a Group III nitride crystal 204, wherein in the Group III nitride crystal generation step, the reaction is performed in the presence of a carbon-containing substance.
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