发明授权
- 专利标题： MOS device assembly
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申请号： US14358067申请日： 2011-11-15
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公开(公告)号： US10026734B2公开(公告)日： 2018-07-17
- 发明人: Brendan Toner , Tsui Ping Chu , Foo Sen Liew
- 申请人： Brendan Toner , Tsui Ping Chu , Foo Sen Liew
- 申请人地址： DE Erfurt
- 专利权人： X-FAB SEMICONDUCTOR FOUNDRIES AG
- 当前专利权人： X-FAB SEMICONDUCTOR FOUNDRIES AG
- 当前专利权人地址： DE Erfurt
- 代理机构： Nixon & Vanderhye PC
- 国际申请： PCT/EP2011/070176 WO 20111115
- 国际公布： WO2013/071959 WO 20130523
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L21/8234 ; H01L27/02 ; H03F1/32 ; H01L21/02 ; H01L21/28 ; H01L29/08 ; H01L29/423 ; H01L29/49 ; H01L29/51
摘要：
A MOS device assembly having at least two transistors, each transistor having a gate region. The dimensions of the gate region of the first transistor are different from the dimensions of the gate region of the second transistor. The transconductance of the MOS device assembly is substantially uniform when the gate regions of the first and second transistors are biased using the same voltage.
公开/授权文献
- US20140367796A1 MOS DEVICE ASSEMBLY 公开/授权日：2014-12-18
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