Methods of operating a memory include applying a first voltage level to control gates of a plurality of memory cells selected to be programmed while applying a second voltage level to a respective data line for each memory cell of the plurality of memory cells; increasing the voltage level applied to the respective data line for memory cells of a first subset of memory cells to a third voltage level then increasing the voltage level applied to the control gates of the plurality of memory cells to a fourth voltage level; increasing the voltage level applied to the respective data line for each memory cell of a second subset of memory cells of the plurality of memory cells to a fifth voltage level then; and after increasing the voltage level applied to the respective data line for each memory cell of the second subset of memory cells to the fifth voltage level, increasing the voltage level applied to the control gates of the plurality of memory cells to a sixth voltage level.