- 专利标题： Semiconductor device and method for manufacturing semiconductor device
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申请号： US14980433申请日： 2015-12-28
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公开(公告)号： US10043865B2公开(公告)日： 2018-08-07
- 发明人: Michio Nemoto , Takashi Yoshimura
- 申请人： FUJI ELECTRIC CO., LTD.
- 申请人地址： JP Kawasaki-Shi
- 专利权人： FUJI ELECTRIC CO., LTD.
- 当前专利权人： FUJI ELECTRIC CO., LTD.
- 当前专利权人地址： JP Kawasaki-Shi
- 代理机构： Rossi, Kimms & McDowell LLP
- 优先权： JP2009-251944 20091102
- 主分类号： H01L29/74
- IPC分类号： H01L29/74 ; H01L31/111 ; H01L29/06 ; H01L21/263 ; H01L29/36 ; H01L29/66 ; H01L29/739 ; H01L29/861 ; H01L29/868 ; H01L29/885 ; H01L29/32 ; H01L29/08 ; H01L29/10 ; H01L21/268 ; H01L21/322
摘要：
A p anode layer is formed on one main surface of an n− drift layer. N+ cathode layer having an impurity concentration more than that of the n− drift layer is formed on the other main surface. An anode electrode is formed on the surface of the p anode layer. A cathode electrode is formed on the surface of the n+ cathode layer. N-type broad buffer region having a net doping concentration more than the bulk impurity concentration of a wafer and less than the n+ cathode layer and p anode layer is formed in the n− drift layer. Resistivity ρ0 of the n− drift layer satisfies 0.12V0≤ρ0≤0.25V0 with respect to rated voltage V0. Total amount of net doping concentration of the broad buffer region is equal to or more than 4.8×1011 atoms/cm2 and equal to or less than 1.0×1012 atoms/cm2.
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