Invention Grant
- Patent Title: Light emitting diode chip
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Application No.: US15402689Application Date: 2017-01-10
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Publication No.: US10043958B2Publication Date: 2018-08-07
- Inventor: Korbinian Perzlmaier , Kai Gehrke , Robert Walter , Karl Engl , Guido Weiss , Markus Maute , Stefanie Rammelsberger
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE
- Agency: DLA Piper LLP (US)
- Priority: DE102011112000 20110831
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L33/60 ; H01L33/38 ; H01L33/40 ; H01L33/42 ; H01L33/56

Abstract:
A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.
Public/Granted literature
- US10008649B2 Light emitting diode chip Public/Granted day:2018-06-26
Information query
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