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11 条记录 (耗时 0.018 秒)

    Method of producing an electronic component
    3.
    发明授权
    Method of producing an electronic component 有权

    公开(公告)号：US10290997B2

    公开(公告)日：2019-05-14

    申请号：US15550888

    申请日：2016-02-18

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Jens Mueller ,  Christoph Stephan ,  Robert Walter ,  Stefan Hartauer ,  Christian Rumbolz

    IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/028 ,  H01S5/042

    摘要： A method of producing an electronic component includes providing a surface comprising a first region and a second region adjoining the first region, arranging a sacrificial layer above the first region of the surface, arranging a passivation layer above the sacrificial layer and the second region of the surface, creating an opening in the passivation layer above the first region of the surface, wherein the opening in the passivation layer is created with an opening area that is smaller than the first region, and removing the sacrificial layer and the portions of the passivation layer that are arranged above the first region.

    Light emitting diode chip
    5.
    发明授权
    Light emitting diode chip 有权

    公开(公告)号：US10008649B2

    公开(公告)日：2018-06-26

    申请号：US15402689

    申请日：2017-01-10

    申请人： OSRAM Opto Semiconductors GmbH

    发明人： Korbinian Perzlmaier ,  Kai Gehrke ,  Robert Walter ,  Karl Engl ,  Guido Weiss ,  Markus Maute ,  Stefanie Rammelsberger

    IPC分类号： H01L33/62 ,  H01L33/60 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/56

    摘要： A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.

    Optoelectronic Semiconductor Chip
    8.
    发明申请
    Optoelectronic Semiconductor Chip 有权
    光电半导体芯片

    公开(公告)号：US20140197435A1

    公开(公告)日：2014-07-17

    申请号：US14122134

    申请日：2012-04-26

    申请人： OSRAM OPTO SEMICONDUCTORS GMBH

    发明人： Markus Maute ,  Karl Engl ,  Sebastian Taeger ,  Robert Walter ,  Johannes Stocker

    IPC分类号： H01L33/42 ,  H01L33/60

    CPC分类号： H01L33/46 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a minor layer, the TCO-layer being arranged between the n-side of the semiconductor body and the minor layer.

    摘要翻译： 光电半导体芯片包括半导体材料的半导体本体，p接触层和n接触层。 半导体主体包括用于产生辐射的有源层。 半导体本体包括p侧和n侧，其间布置有源层。 p接触层用于电接触p侧。 n接触层用于电接触n侧1b。 n接触层包含TCO层和次层，TCO层布置在半导体主体的n侧和次要层之间。