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公开(公告)号：US20220172976A1
公开(公告)日：2022-06-02
申请号：US17607804
申请日：2020-04-21
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Andreas Biebersdorf , Stefan Illek , Christoph Klemp , Felix Feix , Ines Pietzonka , Petrus Sundgren , Christian Berger , Ana Kanevce , Karl Engl
IPC: H01L21/683 , H01L25/075
Abstract: In an embodiment an arrangement includes a plurality of semiconductor chips arranged on a carrier, wherein the carrier is a growth substrate or an auxiliary carrier, wherein the semiconductor chips are arranged at grid points of a grid, and wherein the grid is a hexagonal grid deformed by a deformation factor along at least one of a plurality of axes of the grid and has a shearing along at least one of the plurality of axes of the grid.
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公开(公告)号：US09917229B2
公开(公告)日：2018-03-13
申请号：US15313531
申请日：2015-05-22
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Korbinian Perzlmaier , Bjoern Muermann , Karl Engl , Christian Eichinger
IPC: H01L33/38 , H01L33/42 , H01L51/52 , H01L51/44 , H01L31/0224
CPC classification number: H01L33/38 , H01L31/022466 , H01L33/42 , H01L51/442 , H01L51/445 , H01L51/5203 , H01L51/5215 , H01L51/5234 , Y02E10/549
Abstract: An electrical contact structure (10) for a semiconductor component (100) is specified, comprising a transparent electrically conductive contact layer (1), on which a first metallic contact layer (2) is applied, a second metallic contact layer (3), which completely covers the first metallic contact layer (2), and a separating layer (4), which is arranged between the transparent electrically conductive contact layer (1) and the second metallic contact layer (3) and which separates the second metallic contact layer (3) from the transparent electrically conductive contact layer (1).Furthermore, a semiconductor component (100) comprising a contact structure (10) is specified.
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公开(公告)号：US20220123182A1
公开(公告)日：2022-04-21
申请号：US17645644
申请日：2021-12-22
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Andreas Biebersdorf , Michael Brandl , Peter Brick , Jean-Jacques Drolet , Hubert Halbritter , Laura Kreiner , Erwin Lang , Andreas Leber , Marc Philippens , Thomas Schwarz , Julia Stolz , Xue Wang , Karsten Diekmann , Karl Engl , Siegfried Herrmann , Stefan Illek , Ines Pietzonka , Andreas Rausch , Simon Schwalenberg , Petrus Sundgren , Georg Bogner , Christoph Klemp , Christine Rafael , Felix Feix , Eva-Maria Rummel , Nicole Heitzer , Marie Assmann , Christian Berger , Ana Kanevce
IPC: H01L33/52 , H01L33/50 , H01L33/60 , H01L33/04 , H01L25/075
Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μ.
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公开(公告)号：US20220059737A1
公开(公告)日：2022-02-24
申请号：US17515138
申请日：2021-10-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Andreas Biebersdorf , Michael Brandl , Peter Brick , Jean-Jacques Drolet , Hubert Halbritter , Laura Kreiner , Erwin Lang , Andreas Leber , Marc Philippens , Thomas Schwarz , Julia Stolz , Xue Wang , Karsten Diekmann , Karl Engl , Siegfried Herrmann , Stefan Illek , Ines Pietzonka , Andreas Rausch , Simon Schwalenberg , Petrus Sundgren , Georg Bogner , Christoph Klemp , Christine Rafael , Felix Feix , Eva-Maria Rummel , Nicole Heitzer , Marie Assmann , Christian Berger , Ana Kanevce
IPC: H01L33/52 , H01L33/50 , H01L33/60 , H01L33/04 , H01L25/075
Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.
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5.发明授权公开(公告)号：US09722136B2
公开(公告)日：2017-08-01
申请号：US15098926
申请日：2016-04-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Karl Engl , Markus Maute , Stefanie Rammelsberger , Anna Kasprzak-Zablocka
CPC classification number: H01L33/0075 , H01L33/382 , H01L33/385 , H01L33/405 , H01L33/52 , H01L2933/005
Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.
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Patent Agency Ranking
6.发明申请Optoelectronic Semiconductor Chip Encapsulated with an ALD Layer and Corresponding Method for Production 有权用ALD层封装的光电半导体芯片和相应的生产方法公开(公告)号：US20150372203A1
公开(公告)日：2015-12-24
申请号：US14760454
申请日：2014-01-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Johann Eibl , Sebastian Taeger , Lutz Höppel , Karl Engl , Stefanie Rammelsberger , Markus Maute , Michael Huber , Rainer Hartmann , Georg Hartung
CPC classification number: H01L33/54 , G01B2210/306 , H01L21/0228 , H01L33/405 , H01L33/44 , H01L33/52 , H01L33/60 , H01L33/62 , H01L2924/0002 , H01L2924/181 , H01L2933/005 , H01L2924/00
Abstract: An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.
Abstract translation: 光电子半导体芯片包括具有用于产生电磁辐射的有源区的半导体本体，用于反射电磁辐射的第一镜层，用电绝缘材料形成的第一封装层，以及用于机械地支撑第一封装的载体 第一镜层和半导体本体。 第一镜层布置在载体和半导体本体之间。 第一封装层布置在载体和第一反射镜层之间。 第一封装层是ALD层。
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7.发明授权公开(公告)号：US10164143B2
公开(公告)日：2018-12-25
申请号：US15661614
申请日：2017-07-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Karl Engl , Markus Maute , Stefanie Rammelsberger , Anna Kasprzak-Zablocka
Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.
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公开(公告)号：US10115867B2
公开(公告)日：2018-10-30
申请号：US15650677
申请日：2017-07-14
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Markus Maute , Karl Engl , Sebastian Taeger , Robert Walter , Johannes Stocker
IPC: H01L29/49 , H01L33/46 , H01L33/32 , H01L33/06 , H01L33/42 , H01L33/38 , H01L33/60 , H01L33/20 , H01L33/40
Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.
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公开(公告)号：US10014444B2
公开(公告)日：2018-07-03
申请号：US14905763
申请日：2014-06-25
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Karl Engl , Georg Hartung , Johann Eibl , Michael Huber , Markus Maute
CPC classification number: H01L33/46 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/505 , H01L33/62 , H01L2933/0025
Abstract: An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.
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10.发明申请公开(公告)号：US20170324000A1
公开(公告)日：2017-11-09
申请号：US15661614
申请日：2017-07-27
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Karl Engl , Markus Maute , Stefanie Rammelsberger , Anna Kasprzak-Zablocka
CPC classification number: H01L33/0075 , H01L33/382 , H01L33/385 , H01L33/405 , H01L33/52 , H01L2933/005
Abstract: An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.
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