Invention Grant
- Patent Title: High performance memory controller
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Application No.: US15583678Application Date: 2017-05-01
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Publication No.: US10055293B2Publication Date: 2018-08-21
- Inventor: Violante Moschiano , Walter Di Francesco , Luca De Santis , Giovanni Santin
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; H03M13/37 ; G11C29/02 ; G11C29/52 ; H03M13/11 ; G11C29/04 ; H03M13/45

Abstract:
A memory device includes a memory array that includes a buffer data. The memory device also includes a memory controller. The memory controller includes an error correction code (ECC) component. The memory controller further receives a status command and an indication related to the quality of the data to analyze with the ECC component. Based on a status value, the memory controller utilizes one of a plurality of error correction techniques via the ECC component to correct an error (e.g., soft state, calibration, etc.).
Public/Granted literature
- US20170235637A1 HIGH PERFORMANCE MEMORY CONTROLLER Public/Granted day:2017-08-17
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