Invention Grant
- Patent Title: Nonvolatile memory devices, methods of operating the same and solid state drives including the same
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Application No.: US15237111Application Date: 2016-08-15
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Publication No.: US10061647B2Publication Date: 2018-08-28
- Inventor: Young-Seop Shim , Jae-Hong Kim , Sang-Soo Cha , Jin-Man Han
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Ward and Smith, P.A.
- Priority: KR10-2015-0119697 20150825
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; G11C29/52 ; G11C16/10 ; G11C16/34 ; G11C16/20 ; G11C16/26 ; G11C29/02 ; G11C29/04 ; G11C29/50
Abstract:
In a method of operating a nonvolatile memory device, a plurality of pages of a first memory block of a plurality of memory blocks of a memory cell array are programmed. After programming, a dummy pulse is applied to at least some of the plurality of memory blocks at least once before a read operation on is performed on one of the plurality of pages.
Public/Granted literature
- US20170062065A1 NONVOLATILE MEMORY DEVICES, METHODS OF OPERATING THE SAME AND SOLID STATE DRIVES INCLUDING THE SAME Public/Granted day:2017-03-02
Information query
