公开(公告)号：US10373693B2

公开(公告)日：2019-08-06

申请号：US15926419

申请日：2018-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Soo Cha ,  Young-Seop Shim ,  Dae-Won Kim

IPC: G11C16/06 ,  G11C16/34 ,  G11C16/26 ,  G06F13/40 ,  G06F13/16 ,  G11C11/56 ,  G11C13/00

Abstract: A method of operating a storage device includes: performing a background read operation on a nonvolatile memory by using a default read voltage level; performing a read retry operation on the nonvolatile memory by using a corrected read voltage level when the background read operation fails; storing the corrected read voltage level in a history buffer when the read retry operation succeeds; and performing a host read operation on the nonvolatile memory by using the history buffer in response to a read request received from a host.

公开(公告)号：US09489253B2

公开(公告)日：2016-11-08

申请号：US14303658

申请日：2014-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Soo Cha

IPC: H03M13/00 ,  G06F11/10

CPC classification number: G06F11/10

Abstract: An method is provided for operating a memory system. The method includes reading data from memory cells connected to a selected word line to generate read data; performing an error correction operation based on the read data and generating segmented error correcting code (ECC) read data; transferring the segmented ECC read data to a host side buffer and increasing a value of a host DMA count; comparing the value of the host DMA count with a read latency count value; selectively updating an ECC status information signal according to the comparison result; and transferring the segmented ECC read data to a host.

Abstract translation: 提供了一种用于操作存储器系统的方法。 该方法包括从连接到选定字线的存储器单元读取数据以产生读取数据; 基于读取的数据执行纠错操作并产生分段纠错码（ECC）读取数据; 将分割的ECC读取数据传送到主机侧缓冲器并增加主机DMA计数的值; 将主机DMA计数值与读延迟计数值进行比较; 根据比较结果选择性地更新ECC状态信息信号; 并将分割的ECC读取数据传送到主机。

公开(公告)号：US10706938B2

公开(公告)日：2020-07-07

申请号：US15844197

申请日：2017-12-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Soo Cha ,  Young-Seop Shim

IPC: G11C16/16 ,  G11C16/34 ,  G06F12/02 ,  G11C5/14 ,  G11C16/08 ,  G11C16/20 ,  G11C16/10 ,  G11C11/56 ,  G11C16/04 ,  G11C7/20

Abstract: An operating method of a storage device, which includes a nonvolatile memory device, includes entering a power-on mode, searching for an open memory block, which includes at least one erase word line, from among memory blocks included in the nonvolatile memory device, applying a program voltage to the at least one erase word line to close the open memory block if the number of the erase word lines included in the open memory block is not more than a preset value, and after the power-on mode, entering a normal operation mode. Memory cells connected to the at least one erase word line to which the program voltage is applied are programmed to have a threshold voltage distribution range higher than a threshold voltage distribution range of an erase state.

公开(公告)号：US10061647B2

公开(公告)日：2018-08-28

申请号：US15237111

申请日：2016-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Seop Shim ,  Jae-Hong Kim ,  Sang-Soo Cha ,  Jin-Man Han

IPC: G11C29/00 ,  G06F11/10 ,  G11C29/52 ,  G11C16/10 ,  G11C16/34 ,  G11C16/20 ,  G11C16/26 ,  G11C29/02 ,  G11C29/04 ,  G11C29/50

CPC classification number: G06F11/1068 ,  G06F11/1048 ,  G11C16/10 ,  G11C16/20 ,  G11C16/26 ,  G11C16/349 ,  G11C16/3495 ,  G11C29/025 ,  G11C29/028 ,  G11C29/52 ,  G11C2029/0407 ,  G11C2029/0409 ,  G11C2029/0411 ,  G11C2029/5004

Abstract: In a method of operating a nonvolatile memory device, a plurality of pages of a first memory block of a plurality of memory blocks of a memory cell array are programmed. After programming, a dummy pulse is applied to at least some of the plurality of memory blocks at least once before a read operation on is performed on one of the plurality of pages.