Invention Grant
- Patent Title: Image sensor and method for fabricating the same
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Application No.: US15214012Application Date: 2016-07-19
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Publication No.: US10068937B2Publication Date: 2018-09-04
- Inventor: Yun-Hui Yang , Sung-Kun Park , Pyong-Su Kwag , Ho-Ryeong Lee , Young-Jun Kwon
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2016-0034041 20160322
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L29/10 ; H01L29/66 ; H01L21/8234 ; H01L21/28 ; H01L29/786 ; H01L29/423
Abstract:
This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.
Public/Granted literature
- US20170278884A1 IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2017-09-28
Information query
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