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    Three-layer stacked image sensor
    1.
    发明授权
    Three-layer stacked image sensor 有权

    公开(公告)号：US10163946B2

    公开(公告)日：2018-12-25

    申请号：US15426350

    申请日：2017-02-07

    Applicant: SK hynix Inc.

    Inventor： Young-Jun Kwon

    IPC: H01L27/14 ,  H01L27/146 ,  H04N5/378

    Abstract: An image sensor may include a lower device that includes logic transistors, an intermediate device that is formed over the lower device and includes a Correlated Double Sampling (CDS) circuit and a capacitor, and an upper device that is formed over the intermediate device and includes a photodiode, a floating diffusion region, and a transfer gate electrode.

    Image sensor
    3.
    发明授权
    Image sensor 有权

    公开(公告)号：US10411054B2

    公开(公告)日：2019-09-10

    申请号：US16217963

    申请日：2018-12-12

    Applicant: SK hynix Inc.

    Inventor： Pyong-Su Kwag ,  Young-Jun Kwon ,  Cha-Young Lee

    IPC: H01L27/146 ,  H01L29/423 ,  H01L29/786 ,  H04N5/378 ,  H01L27/142

    Abstract: An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.

    Non-volatile memory device and method of fabricating the same
    4.
    发明授权
    Non-volatile memory device and method of fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US09171622B2

    公开(公告)日：2015-10-27

    申请号：US13843846

    申请日：2013-03-15

    Applicant: SK hynix Inc.

    Inventor： Young-Jun Kwon

    IPC: G11C16/00 ,  G11C16/04 ,  G11C16/34 ,  H01L29/423 ,  H01L29/66 ,  H01L29/788

    CPC classification number: G11C16/0441 ,  G11C16/3477 ,  H01L29/42324 ,  H01L29/66825 ,  H01L29/7887

    Abstract: This technology provides a non-volatile memory device and a method of manufacturing the same, which may prevent an over-erase phenomenon and also increase the degree of integration, In an aspect, the non-volatile memory device includes a select gate formed over a substrate, a plurality of floating gates laterally formed with respect to the select gate and spaced apart from each other, to be independently programmable, and a plurality of junctions formed in the substrate and arranged to be controllable by the respective floating gates.

    Abstract translation: 该技术提供了一种非易失性存储器件及其制造方法，其可以防止过度擦除现象并且还增加集成度。一方面，非易失性存储器件包括形成在 衬底，相对于选择栅极横向形成并且彼此分开的多个浮动栅极可独立编程，以及形成在衬底中并被布置成可由相应浮动栅极控制的多个结。

    Image sensor
    5.
    发明授权
    Image sensor 有权

    公开(公告)号：US10438981B2

    公开(公告)日：2019-10-08

    申请号：US15251998

    申请日：2016-08-30

    Applicant: SK hynix Inc.

    Inventor： Pyong-Su Kwag ,  Young-Jun Kwon ,  Cha-Young Lee

    IPC: H01L27/146 ,  H01L29/423 ,  H01L29/786 ,  H04N5/378

    Abstract: An image sensor, comprising: a photoelectric conversion element; a transfer transistor formed over the photoelectric conversion element; and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are trench-type transistors and are symmetrical structure to each other with respect to the gap, wherein the photoelectric conversion element is a continuous layer under both the transfer transistor and the reset transistor, and is completely below the transfer transistor and the reset transistor.

    Nonvolatile memory device
    7.
    发明授权
    Nonvolatile memory device 有权
    非易失性存储器件

    公开(公告)号：US09293468B2

    公开(公告)日：2016-03-22

    申请号：US14533821

    申请日：2014-11-05

    Applicant: SK hynix Inc.

    Inventor： Sung-Kun Park ,  Young-Jun Kwon

    IPC: H01L29/76 ,  H01L29/792 ,  H01L29/788 ,  H01L29/78 ,  H01L21/762 ,  H01L21/336 ,  H01L27/115 ,  H01L29/423

    CPC classification number: H01L27/11521 ,  H01L27/11519 ,  H01L29/42324 ,  H01L29/7881

    Abstract: A nonvolatile memory device includes a tunneling region and an erase region formed over a substrate, a selection gate formed over the substrate to overlap with the tunneling region, a floating gate formed over the substrate to be disposed adjacent to the selection gate with a gap therebetween and to overlap with the tunneling region and the erase region, and a charge blocking layer filling the gap.

    Abstract translation: 非易失性存储器件包括在衬底上形成的隧道区域和擦除区域，形成在衬底上以与隧道区域重叠的选择栅极，形成在衬底上方的浮栅，以与选择栅极相邻设置，其间具有间隙 并且与隧穿区域和擦除区域重叠，以及填充间隙的电荷阻挡层。

    Nonvolatile memory device and method for fabricating the same
    8.
    发明授权
    Nonvolatile memory device and method for fabricating the same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US09153704B2

    公开(公告)日：2015-10-06

    申请号：US13870809

    申请日：2013-04-25

    Applicant: SK hynix Inc.

    Inventor： Young-Jun Kwon

    IPC: H01L29/788 ,  G01C11/34 ,  H01L29/792 ,  H01L21/28 ,  H01L29/66 ,  H01L29/423 ,  H01L27/115

    CPC classification number: H01L29/792 ,  H01L21/28282 ,  H01L27/1157 ,  H01L29/42344 ,  H01L29/66833

    Abstract: A nonvolatile memory device includes a memory gate including a memory layer provided over a substrate and a gate electrode provided over the memory layer, the memory gate having first and second opposing sidewalls disposed on first and second sides of the memory gate, respectively; first and second select gates disposed on the first and second sidewalls of the memory gate; a source region formed in the substrate proximate to the first side of the memory gate; a drain region formed in the substrate proximate to the second side of the memory gate; and a gate contact coupled to the gate electrode of the memory gate and to the first select gate, or the second select gate, or both.

    Abstract translation: 非易失性存储器件包括存储器栅极，其包括设置在衬底上的存储层和设置在存储层上的栅电极，存储器栅极分别具有设置在存储器栅极的第一和第二侧上的第一和第二相对侧壁; 设置在存储器栅极的第一和第二侧壁上的第一和第二选择栅极; 源极区，形成在所述衬底中，靠近所述存储栅的第一侧; 漏极区，形成在所述衬底中，靠近所述存储栅的第二侧; 以及耦合到存储器栅极的栅电极和第一选择栅极或第二选择栅极或两者的栅极接触。

    Image sensor
    9.
    发明授权
    Image sensor 有权

    公开(公告)号：US10043838B2

    公开(公告)日：2018-08-07

    申请号：US15215770

    申请日：2016-07-21

    Applicant: SK hynix Inc.

    Inventor： Pyong-Su Kwag ,  Yun-Hui Yang ,  Young-Jun Kwon

    IPC: H01L27/146 ,  H04N5/378

    Abstract: An image sensor may include: a photoelectric conversion element including a second conductive layer formed over a first conductive layer; an insulating layer and a third conductive layer which are sequentially formed over the second conductive layer; an opening exposing the second conductive layer through the third conductive layer and the insulating layer; a channel layer formed along the surface of the opening, and including first and second channel layers which are coupled to each other while having different conductivity types; and a transfer gate formed over the channel layer to fill the opening, and partially formed over the third conductive layer.

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