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公开(公告)号:US20210043668A1
公开(公告)日:2021-02-11
申请号:US17080321
申请日:2020-10-26
Applicant: SK hynix Inc.
Inventor: Pyong-Su Kwag
IPC: H01L27/146 , H04N5/376 , H04N5/3745
Abstract: An image sensor may include a pixel array including a plurality of pixel blocks structured to convert light into electrical signals. Each of the plurality of pixel blocks may include a first light receiving circuit including a plurality of unit pixels which share a first floating diffusion; a second light receiving circuit arranged adjacent to the first light receiving circuit in a second direction, and including a plurality of unit pixels which share a second floating diffusion; a first driving circuit and a second driving circuit positioned between the first light receiving circuit and the second light receiving circuit, and aligned in a first direction crossing the second direction; and an intercoupling circuit configured to electrically couple the first floating diffusion, the second floating diffusion, the first driving circuit and the second driving circuit.
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公开(公告)号:US10438981B2
公开(公告)日:2019-10-08
申请号:US15251998
申请日:2016-08-30
Applicant: SK hynix Inc.
Inventor: Pyong-Su Kwag , Young-Jun Kwon , Cha-Young Lee
IPC: H01L27/146 , H01L29/423 , H01L29/786 , H04N5/378
Abstract: An image sensor, comprising: a photoelectric conversion element; a transfer transistor formed over the photoelectric conversion element; and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are trench-type transistors and are symmetrical structure to each other with respect to the gap, wherein the photoelectric conversion element is a continuous layer under both the transfer transistor and the reset transistor, and is completely below the transfer transistor and the reset transistor.
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公开(公告)号:US09620540B1
公开(公告)日:2017-04-11
申请号:US15019625
申请日:2016-02-09
Applicant: SK hynix Inc.
Inventor: Yun-Hui Yang , Pyong-Su Kwag , Young-Jun Kwon , Min-Ki Na , Sung-Kun Park , Donghyun Woo , Cha-Young Lee , Ho-Ryeong Lee
IPC: H01L27/146
CPC classification number: H01L27/14614 , H01L27/14609 , H01L27/1461 , H01L27/14616 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14689 , H01L29/04 , H01L29/16 , H01L29/511 , H01L29/7827
Abstract: An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.
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公开(公告)号:US11037967B2
公开(公告)日:2021-06-15
申请号:US16218281
申请日:2018-12-12
Applicant: SK hynix Inc.
Inventor: Pyong-Su Kwag
IPC: H01L27/14 , H01L27/146 , H04N5/376 , H04N5/3745
Abstract: An image sensor may include a pixel array including a plurality of pixel blocks operable to convert light into electrical signals. Each of the plurality of pixel blocks may include a first light receiving circuit including a plurality of unit pixels that share a first floating diffusion; a second light receiving circuit arranged adjacent to the first light receiving circuit in a second direction, and including a plurality of unit pixels that share a second floating diffusion; a first driving circuit positioned between the first light receiving circuit and the second light receiving circuit; a second driving circuit positioned adjacent to the other side facing away from one side of the first light receiving circuit or the second light receiving circuit, which is adjacent to the first driving circuit; and a third driving circuit positioned adjacent to the first driving circuit or the second driving circuit.
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公开(公告)号:US10854649B2
公开(公告)日:2020-12-01
申请号:US16219049
申请日:2018-12-13
Applicant: SK hynix Inc.
Inventor: Pyong-Su Kwag
IPC: H01L27/146 , H04N5/3745
Abstract: An image sensor may include unit pixel blocks with each having pixels for sensing incident light. Each unit pixel block may include a first sub pixel block including a first floating diffusion, a second sub pixel block including a second floating diffusion, and a common transistor block including a first drive transistor adjacent to the first floating diffusion and a second drive transistor adjacent to the second floating diffusion. The first and second floating diffusions may be electrically coupled in common to the first and second drive transistors.
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公开(公告)号:US20190237498A1
公开(公告)日:2019-08-01
申请号:US16219771
申请日:2018-12-13
Applicant: SK hynix Inc.
Inventor: Pyong-Su Kwag
IPC: H01L27/146 , H04N5/3745 , H04N5/376
CPC classification number: H01L27/14605 , H01L27/14614 , H01L27/14643 , H04N5/37455 , H04N5/3765
Abstract: An image sensor may include a pixel array including a plurality of pixel blocks structured to convert light into electrical signals. Each of the plurality of pixel blocks may include a first light receiving circuit including a plurality of unit pixels which share a first floating diffusion; a second light receiving circuit arranged adjacent to the first light receiving circuit in a second direction, and including a plurality of unit pixels which share a second floating diffusion; a first driving circuit and a second driving circuit positioned between the first light receiving circuit and the second light receiving circuit, and aligned in a first direction crossing the second direction; and an intercoupling circuit configured to electrically couple the first floating diffusion, the second floating diffusion, the first driving circuit and the second driving circuit.
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公开(公告)号:US10068937B2
公开(公告)日:2018-09-04
申请号:US15214012
申请日:2016-07-19
Applicant: SK hynix Inc.
Inventor: Yun-Hui Yang , Sung-Kun Park , Pyong-Su Kwag , Ho-Ryeong Lee , Young-Jun Kwon
IPC: H01L27/146 , H01L29/10 , H01L29/66 , H01L21/8234 , H01L21/28 , H01L29/786 , H01L29/423
Abstract: This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.
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公开(公告)号:US09978785B2
公开(公告)日:2018-05-22
申请号:US15238529
申请日:2016-08-16
Applicant: SK hynix Inc.
Inventor: Pyong-Su Kwag , Ho-Ryeong Lee
IPC: H01L27/146
CPC classification number: H01L27/14607 , H01L27/14636
Abstract: An image sensor may include: a substrate including a photoelectric conversion element; a first interlayer dielectric layer formed over the photoelectric conversion element; a channel layer including a first region and a second region, the first region being formed in an opening passing through the first interlayer dielectric layer, with a portion of the first region contacting the photoelectric conversion element, and the second region being formed over the first interlayer dielectric layer; a transfer transistor formed over the first region of the channel layer, the transfer transistor including a transfer gate which gapfills the opening; and a reset transistor including a reset gate formed over the second region of the channel layer.
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公开(公告)号:US10411054B2
公开(公告)日:2019-09-10
申请号:US16217963
申请日:2018-12-12
Applicant: SK hynix Inc.
Inventor: Pyong-Su Kwag , Young-Jun Kwon , Cha-Young Lee
IPC: H01L27/146 , H01L29/423 , H01L29/786 , H04N5/378 , H01L27/142
Abstract: An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.
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公开(公告)号:US10381492B2
公开(公告)日:2019-08-13
申请号:US15709977
申请日:2017-09-20
Applicant: SK hynix Inc.
Inventor: Sun-Ha Hwang , Pyong-Su Kwag , Sang-Uk Park , Kwang-Deok Kim , Ho-Ryeong Lee , Ju-Tae Ryu
IPC: H01L29/94 , H01L27/146 , H01L49/02 , H01L23/522 , H01L27/08
Abstract: A MOS capacitor may include: an isolation layer formed in a substrate and defining an active region; a first electrode formed in the active region, and including an impurity region spaced from the isolation layer; and a second electrode formed over the substrate overlapping the impurity region, and including a gate having a plurality of gate patterns adjacent to each other with a gap therebetween.
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