IMAGE SENSOR INCLUDING A PIXEL ARRAY HAVING PIXEL BLOCKS ARRANGED IN A ZIGZAG FORM

    公开(公告)号:US20210043668A1

    公开(公告)日:2021-02-11

    申请号:US17080321

    申请日:2020-10-26

    Applicant: SK hynix Inc.

    Inventor: Pyong-Su Kwag

    Abstract: An image sensor may include a pixel array including a plurality of pixel blocks structured to convert light into electrical signals. Each of the plurality of pixel blocks may include a first light receiving circuit including a plurality of unit pixels which share a first floating diffusion; a second light receiving circuit arranged adjacent to the first light receiving circuit in a second direction, and including a plurality of unit pixels which share a second floating diffusion; a first driving circuit and a second driving circuit positioned between the first light receiving circuit and the second light receiving circuit, and aligned in a first direction crossing the second direction; and an intercoupling circuit configured to electrically couple the first floating diffusion, the second floating diffusion, the first driving circuit and the second driving circuit.

    Image sensor
    2.
    发明授权

    公开(公告)号:US10438981B2

    公开(公告)日:2019-10-08

    申请号:US15251998

    申请日:2016-08-30

    Applicant: SK hynix Inc.

    Abstract: An image sensor, comprising: a photoelectric conversion element; a transfer transistor formed over the photoelectric conversion element; and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are trench-type transistors and are symmetrical structure to each other with respect to the gap, wherein the photoelectric conversion element is a continuous layer under both the transfer transistor and the reset transistor, and is completely below the transfer transistor and the reset transistor.

    Image sensor including a pixel array having pixel blocks arranged in a zigzag form

    公开(公告)号:US11037967B2

    公开(公告)日:2021-06-15

    申请号:US16218281

    申请日:2018-12-12

    Applicant: SK hynix Inc.

    Inventor: Pyong-Su Kwag

    Abstract: An image sensor may include a pixel array including a plurality of pixel blocks operable to convert light into electrical signals. Each of the plurality of pixel blocks may include a first light receiving circuit including a plurality of unit pixels that share a first floating diffusion; a second light receiving circuit arranged adjacent to the first light receiving circuit in a second direction, and including a plurality of unit pixels that share a second floating diffusion; a first driving circuit positioned between the first light receiving circuit and the second light receiving circuit; a second driving circuit positioned adjacent to the other side facing away from one side of the first light receiving circuit or the second light receiving circuit, which is adjacent to the first driving circuit; and a third driving circuit positioned adjacent to the first driving circuit or the second driving circuit.

    Image sensor including unit pixel block having common selection transistor

    公开(公告)号:US10854649B2

    公开(公告)日:2020-12-01

    申请号:US16219049

    申请日:2018-12-13

    Applicant: SK hynix Inc.

    Inventor: Pyong-Su Kwag

    Abstract: An image sensor may include unit pixel blocks with each having pixels for sensing incident light. Each unit pixel block may include a first sub pixel block including a first floating diffusion, a second sub pixel block including a second floating diffusion, and a common transistor block including a first drive transistor adjacent to the first floating diffusion and a second drive transistor adjacent to the second floating diffusion. The first and second floating diffusions may be electrically coupled in common to the first and second drive transistors.

    IMAGE SENSOR INCLUDING A PIXEL ARRAY HAVING PIXEL BLOCKS ARRANGED IN A ZIGZAG FORM

    公开(公告)号:US20190237498A1

    公开(公告)日:2019-08-01

    申请号:US16219771

    申请日:2018-12-13

    Applicant: SK hynix Inc.

    Inventor: Pyong-Su Kwag

    Abstract: An image sensor may include a pixel array including a plurality of pixel blocks structured to convert light into electrical signals. Each of the plurality of pixel blocks may include a first light receiving circuit including a plurality of unit pixels which share a first floating diffusion; a second light receiving circuit arranged adjacent to the first light receiving circuit in a second direction, and including a plurality of unit pixels which share a second floating diffusion; a first driving circuit and a second driving circuit positioned between the first light receiving circuit and the second light receiving circuit, and aligned in a first direction crossing the second direction; and an intercoupling circuit configured to electrically couple the first floating diffusion, the second floating diffusion, the first driving circuit and the second driving circuit.

    Image sensor
    8.
    发明授权

    公开(公告)号:US09978785B2

    公开(公告)日:2018-05-22

    申请号:US15238529

    申请日:2016-08-16

    Applicant: SK hynix Inc.

    CPC classification number: H01L27/14607 H01L27/14636

    Abstract: An image sensor may include: a substrate including a photoelectric conversion element; a first interlayer dielectric layer formed over the photoelectric conversion element; a channel layer including a first region and a second region, the first region being formed in an opening passing through the first interlayer dielectric layer, with a portion of the first region contacting the photoelectric conversion element, and the second region being formed over the first interlayer dielectric layer; a transfer transistor formed over the first region of the channel layer, the transfer transistor including a transfer gate which gapfills the opening; and a reset transistor including a reset gate formed over the second region of the channel layer.

    Image sensor
    9.
    发明授权

    公开(公告)号:US10411054B2

    公开(公告)日:2019-09-10

    申请号:US16217963

    申请日:2018-12-12

    Applicant: SK hynix Inc.

    Abstract: An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.

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