Invention Grant
- Patent Title: Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink—harmonic wrinkle reduction
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Application No.: US15693182Application Date: 2017-08-31
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Publication No.: US10074746B2Publication Date: 2018-09-11
- Inventor: Christopher N. Brindle , Jie Deng , Alper Genc , Chieh-Kai Yang
- Applicant: pSemi Corporation
- Applicant Address: US CA San Diego
- Assignee: pSemi Corporation
- Current Assignee: pSemi Corporation
- Current Assignee Address: US CA San Diego
- Agency: Jaquez Land Greenhaus LLP
- Agent Martin J. Jaquez, Esq.; Alessandro Steinf, Esq.
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/78 ; H03K17/16 ; H01L29/10 ; H01L29/08 ; H01L29/06
Abstract:
A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.
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