公开(公告)号：US11967948B2

公开(公告)日：2024-04-23

申请号：US17839386

申请日：2022-06-13

申请人： pSemi Corporation

发明人： Christopher N. Brindle ,  Michael A Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

IPC分类号： H03K17/16 ,  H01L29/06 ,  H01L29/10 ,  H01L29/786 ,  H03K17/30 ,  H03K17/687

CPC分类号： H03K17/162 ,  H01L29/0649 ,  H01L29/1095 ,  H01L29/78609 ,  H01L29/78615 ,  H03K17/687 ,  H01L29/78681 ,  H01L29/78684 ,  H03K2217/0018

摘要： A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US11901459B2

公开(公告)日：2024-02-13

申请号：US17549839

申请日：2021-12-13

申请人： pSemi Corporation

发明人： Michael A. Stuber ,  Christopher N. Brindle ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George P. Imthurn ,  Robert B. Welstand ,  Mark L. Burgener ,  Alexander Dribinsky ,  Tae-Youn Kim

IPC分类号： G06F7/00 ,  H01L29/786 ,  H01L27/12 ,  H01L29/49 ,  H03K17/16

CPC分类号： H01L29/78615 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/78651 ,  H01L29/78654 ,  H01L29/78657 ,  H03K17/162

摘要： A method and apparatus are disclosed for use in improving gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit includes a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET. The SOI MOSFET is adapted to have a selected average time-to-breakdown, responsive to the first and second determinations, and the circuit is operated using techniques for accumulated charge control operatively coupled to the SOI MOSFET. In one embodiment, the accumulated charge control techniques include using an accumulated charge sink operatively coupled to the SOI MOSFET body.

公开(公告)号：US11695407B2

公开(公告)日：2023-07-04

申请号：US17543720

申请日：2021-12-06

申请人： pSemi Corporation

发明人： Alexander Dribinsky ,  Tae Youn Kim ,  Dylan J. Kelly ,  Christopher N. Brindle

IPC分类号： H03K17/16 ,  H03K17/10 ,  H03K17/284 ,  H03K17/687 ,  H03K17/689 ,  H03K17/04 ,  H03K17/06 ,  H03K17/08

CPC分类号： H03K17/161 ,  H03K17/102 ,  H03K17/284 ,  H03K17/689 ,  H03K17/6874 ,  H03K17/04 ,  H03K17/06 ,  H03K17/08 ,  H03K2217/0009

摘要： A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors. A method for controlling charge injection in a switch circuit is disclosed whereby injected charge is generated at resistively-isolated nodes between series coupled switching transistors, and the injected charge is conveyed to at least one node of the switch circuit that is not resistively-isolated.

公开(公告)号：US20220311432A1

公开(公告)日：2022-09-29

申请号：US17839386

申请日：2022-06-13

申请人： pSemi Corporation

发明人： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

IPC分类号： H03K17/16 ,  H01L29/786 ,  H01L29/06 ,  H01L29/10 ,  H03K17/687

摘要： A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FIT performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US10790390B2

公开(公告)日：2020-09-29

申请号：US16377026

申请日：2019-04-05

申请人： pSemi Corporation

发明人： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC分类号： H01L27/12 ,  H01L29/78 ,  H01L49/02 ,  H01L29/06 ,  H01L29/08 ,  H03K17/16 ,  H01L29/10 ,  H01L29/36 ,  H01L29/49 ,  H01L29/786

摘要： A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US20200295750A1

公开(公告)日：2020-09-17

申请号：US16837758

申请日：2020-04-01

申请人： pSemi Corporation

发明人： Tero Tapio Ranta ,  Shawn Bawell ,  Robert W. Greene ,  Christopher N. Brindle ,  Robert Mark Englekirk

IPC分类号： H03K17/16 ,  H03M1/10 ,  H01F21/12 ,  H03H7/01 ,  H03K17/10 ,  H03K17/687 ,  H01G7/00 ,  H03H7/38 ,  H03H11/28 ,  H01L23/522 ,  H01L27/06 ,  H01L27/12 ,  H01L49/02 ,  H03J3/20 ,  H01G4/002

摘要： Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.

公开(公告)号：US10680600B2

公开(公告)日：2020-06-09

申请号：US16377114

申请日：2019-04-05

申请人： pSemi Corporation

发明人： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Mark L. Burgener ,  Robert B. Welstand

IPC分类号： H01L27/12 ,  H03K17/16 ,  H01L29/786 ,  H01L29/06 ,  H01L29/10 ,  H03K17/687

摘要： A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US20200112305A1

公开(公告)日：2020-04-09

申请号：US16673411

申请日：2019-11-04

申请人： pSemi Corporation

发明人： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

IPC分类号： H03K17/16 ,  H01L29/10 ,  H01L29/786 ,  H03K17/687 ,  H01L29/06

摘要： A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US20200036377A1

公开(公告)日：2020-01-30

申请号：US16590262

申请日：2019-10-01

申请人： pSemi Corporation

发明人： Christopher N. Brindle ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Robert B. Welstand ,  Mark L. Burgener

IPC分类号： H03K17/16 ,  H01L29/786 ,  H01L29/06 ,  H01L29/10 ,  H03K17/687

摘要： A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one exemplary embodiment, a circuit having at least one SOI MOSFET is configured to operate in an accumulated charge regime. An accumulated charge sink, operatively coupled to the body of the SOI MOSFET, eliminates, removes or otherwise controls accumulated charge when the FET is operated in the accumulated charge regime, thereby reducing the nonlinearity of the parasitic off-state source-to-drain capacitance of the SOI MOSFET. In RF switch circuits implemented with the improved SOI MOSFET devices, harmonic and intermodulation distortion is reduced by removing or otherwise controlling the accumulated charge when the SOI MOSFET operates in an accumulated charge regime.

公开(公告)号：US20190007042A1

公开(公告)日：2019-01-03

申请号：US16025922

申请日：2018-07-02

申请人： pSemi Corporation

发明人： Tero Tapio Ranta ,  Shawn Bawell ,  Robert W. Greene ,  Christopher N. Brindle ,  Robert Mark Englekirk

IPC分类号： H03K17/16 ,  H03J3/20 ,  H03K17/687 ,  H01L27/12 ,  H01L27/06 ,  H01L23/522 ,  H03K17/10 ,  H01G4/002 ,  H03H11/28 ,  H03H7/01 ,  H01F21/12 ,  H03H7/38

摘要： Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals are described. Such devices and method include use of symmetrical compensation capacitances, symmetrical series capacitors, or symmetrical sizing of the elements of the stack.