公开(公告)号：US20200321467A1

公开(公告)日：2020-10-08

申请号：US16739093

申请日：2020-01-09

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L29/78 ,  H01L27/12 ,  H01L49/02 ,  H01L29/06 ,  H01L29/08 ,  H03K17/16 ,  H01L29/10 ,  H01L29/36 ,  H01L29/49 ,  H01L29/786

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US10790390B2

公开(公告)日：2020-09-29

申请号：US16377026

申请日：2019-04-05

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L27/12 ,  H01L29/78 ,  H01L49/02 ,  H01L29/06 ,  H01L29/08 ,  H03K17/16 ,  H01L29/10 ,  H01L29/36 ,  H01L29/49 ,  H01L29/786

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US12074217B2

公开(公告)日：2024-08-27

申请号：US17206436

申请日：2021-03-19

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L29/36 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L49/02 ,  H03K17/16

CPC classification number: H01L29/7841 ,  H01L27/1203 ,  H01L28/00 ,  H01L29/0649 ,  H01L29/0688 ,  H01L29/0847 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/4908 ,  H01L29/78615 ,  H01L29/78654 ,  H01L29/78657 ,  H03K17/162

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US10629733B2

公开(公告)日：2020-04-21

申请号：US16046974

申请日：2018-07-26

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L27/12 ,  H01L29/78 ,  H01L29/06 ,  H01L29/36 ,  H01L29/49 ,  H01L29/786 ,  H03K17/16 ,  H01L49/02 ,  H01L29/08 ,  H01L29/10

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US20190088781A1

公开(公告)日：2019-03-21

申请号：US16046974

申请日：2018-07-26

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L49/02 ,  H01L29/49 ,  H01L29/36 ,  H01L29/786 ,  H01L27/12 ,  H03K17/16

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US10074746B2

公开(公告)日：2018-09-11

申请号：US15693182

申请日：2017-08-31

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L27/12 ,  H01L29/78 ,  H03K17/16 ,  H01L29/10 ,  H01L29/08 ,  H01L29/06

CPC classification number: H01L29/7841 ,  H01L27/1203 ,  H01L28/00 ,  H01L29/0649 ,  H01L29/0688 ,  H01L29/0847 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/36 ,  H01L29/4908 ,  H01L29/78615 ,  H01L29/78654 ,  H01L29/78657 ,  H03K17/162

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US20240421227A1

公开(公告)日：2024-12-19

申请号：US18815809

申请日：2024-08-26

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/36 ,  H01L29/49 ,  H01L29/786 ,  H03K17/16

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US10797172B2

公开(公告)日：2020-10-06

申请号：US16046974

申请日：2018-07-26

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang ,  Michael A. Stuber ,  Dylan J. Kelly ,  Clint L. Kemerling ,  George Imthurn ,  Mark L. Burgener ,  Robert B. Welstand

IPC: H01L27/12 ,  H01L29/78 ,  H01L29/06 ,  H01L29/36 ,  H01L29/49 ,  H01L29/786 ,  H03K17/16 ,  H01L49/02 ,  H01L29/08 ,  H01L29/10

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US20190237579A1

公开(公告)日：2019-08-01

申请号：US16377026

申请日：2019-04-05

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L29/78 ,  H01L29/36 ,  H01L29/06 ,  H03K17/16 ,  H01L27/12 ,  H01L29/786 ,  H01L29/49 ,  H01L49/02 ,  H01L29/10 ,  H01L29/08

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.

公开(公告)号：US20210320206A1

公开(公告)日：2021-10-14

申请号：US17206436

申请日：2021-03-19

Applicant: pSemi Corporation

Inventor： Christopher N. Brindle ,  Jie Deng ,  Alper Genc ,  Chieh-Kai Yang

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/36 ,  H01L29/49 ,  H01L29/786 ,  H01L27/12 ,  H03K17/16 ,  H01L49/02 ,  H01L29/08 ,  H01L29/10

Abstract: A method and apparatus for use in improving linearity sensitivity of MOSFET devices having an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to address degradation in second- and third-order intermodulation harmonic distortion at a desired range of operating voltage in devices employing an accumulated charge sink.