Invention Grant
- Patent Title: System and method for programming split-gate, non-volatile memory cells
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Application No.: US15084955Application Date: 2016-03-30
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Publication No.: US10079061B2Publication Date: 2018-09-18
- Inventor: Xiaozhou Qian , Viktor Markov , Jong-Won Yoo , Xiao Yan Pi , Alexander Kotov
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: SILICON STORAGE TECHNOLOGY, INC.
- Current Assignee: SILICON STORAGE TECHNOLOGY, INC.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP US
- Agent Brent Yamashita
- Priority: CN201510166483 20150409
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/12 ; G11C16/04 ; G11C16/10
Abstract:
The disclosed embodiments comprise a flash memory device and a method of programming the device in a way that reduces degradation of the device compared to prior art methods.
Public/Granted literature
- US20160336072A1 System And Method For Programming Split-Gate, Non-volatile Memory Cells Public/Granted day:2016-11-17
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