Invention Grant
- Patent Title: Method of manufacturing a semiconductor structure and semiconductor device
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Application No.: US15220794Application Date: 2016-07-27
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Publication No.: US10079284B2Publication Date: 2018-09-18
- Inventor: Wolfgang Werner , Peter Irsigler , Andreas Meiser
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Priority: DE102015112414 20150729
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/308 ; H01L21/762 ; H01L21/765 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/417 ; H01L29/73 ; H01L29/08 ; H01L29/06 ; H01L29/10
Abstract:
A method of manufacturing a structure in a semiconductor body comprises forming a first mask above a first surface of the semiconductor body. The first mask comprises an opening surrounding a first portion of the first mask, thereby separating the first portion and a second portion of the first mask. The semiconductor body is processed through the opening at the first surface. The opening is increased by removing at least part of the first mask in the first portion while maintaining the first mask in the second portion. The semiconductor body is further processed through the opening at the first surface.
Public/Granted literature
- US20170033189A1 Method of Manufacturing a Semiconductor Structure and Semiconductor Device Public/Granted day:2017-02-02
Information query
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