Invention Grant
- Patent Title: Phase change memory stack with treated sidewalls
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Application No.: US15090292Application Date: 2016-04-04
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Publication No.: US10079340B2Publication Date: 2018-09-18
- Inventor: Tsz W. Chan , Yongjun Jeff Hu , Swapnil Lengade , Shu Qin , Everett Allen McTeer
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24 ; G11C13/00

Abstract:
Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming the memory stack out of a plurality of elements. An adhesion species is formed on at least one sidewall of the memory stack wherein the adhesion species has a gradient structure that results in the adhesion species intermixing with an element of the memory stack to terminate unsatisfied atomic bonds of the element. The gradient structure further comprises a film of the adhesion species on an outer surface of the at least one sidewall. A dielectric material is implanted into the film of the adhesion species to form a sidewall liner.
Public/Granted literature
- US20160218282A1 PHASE CHANGE MEMORY STACK WITH TREATED SIDEWALLS Public/Granted day:2016-07-28
Information query
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