发明授权
- 专利标题: Plasma enhanced chemical vapor deposition apparatus and method for controlling the same
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申请号: US14007254申请日: 2012-03-16
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公开(公告)号: US10081870B2公开(公告)日: 2018-09-25
- 发明人: Jinhyouk Shin , Jeonggyu Kim , Kwangho Lee , Jangwoo Lee , Moonkap Lee , Junggeun Oh
- 申请人: Jinhyouk Shin , Jeonggyu Kim , Kwangho Lee , Jangwoo Lee , Moonkap Lee , Junggeun Oh
- 申请人地址: KR Seoul
- 专利权人: LG ELECTRONICS INC.
- 当前专利权人: LG ELECTRONICS INC.
- 当前专利权人地址: KR Seoul
- 代理机构: KED & Associates, LLP
- 优先权: KR10-2011-0026857 20110325; KR10-2011-0140040 20111222
- 国际申请: PCT/KR2012/001910 WO 20120316
- 国际公布: WO2012/134083 WO 20121004
- 主分类号: C23C16/513
- IPC分类号: C23C16/513 ; C23C16/458 ; C23C16/50 ; C23C16/54 ; H01J37/32 ; C23C14/24 ; C23C16/448 ; C23C16/455 ; C23C14/56
摘要:
There is disclosed a plasma enhanced chemical vapor deposition apparatus including a chamber in which plasma reaction is performed to provide a functional film to an object received therein, a pallet mechanically and electrically connected with the object, a conveyer to convey the pallet to an inside from an outside of the chamber, and a power supplier to supply an electric power to the pallet, the power supplier comprising a moving contact distant from the pallet when the pallet is conveyed and contacting with the pallet when the pallet is stopped.
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