Invention Grant
- Patent Title: Three dimensional memory device having isolated periphery contacts through an active layer exhume process
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Application No.: US14853783Application Date: 2015-09-14
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Publication No.: US10096612B2Publication Date: 2018-10-09
- Inventor: Sri Sai Sivakumar Vegunta , Gowrisankar Damarla , Jian Zhou
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Compass IP Law PC
- Main IPC: G06F12/00
- IPC: G06F12/00 ; H01L27/11582 ; H01L27/11573 ; H01L21/3213 ; H01L21/311 ; H01L21/768 ; G06F3/06 ; H01L27/1157
Abstract:
A three dimensional memory device is described having an array region and a periphery region. The array region has a three dimensional stack of storage cells. The periphery region has contacts that extend from above the three dimensional stack of storage cells to below the three dimensional stack of storage cells. The periphery region is substantially devoid of conducting and/or semi-conducting layers of the three dimensional stack of storage cells.
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