- 专利标题: Metal oxide film and semiconductor device
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申请号: US15391186申请日: 2016-12-27
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公开(公告)号: US10096684B2公开(公告)日: 2018-10-09
- 发明人: Yasuharu Hosaka , Toshimitsu Obonai , Yukinori Shima , Masami Jintyou , Daisuke Kurosaki , Takashi Hamochi , Junichi Koezuka , Kenichi Okazaki , Shunpei Yamazaki
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP
- 代理机构: Husch Blackwell LLP
- 优先权: JP2015-257710 20151229; JP2016-125478 20160624
- 主分类号: H01L29/24
- IPC分类号: H01L29/24 ; C04B35/453 ; C04B35/622 ; H01L29/786 ; C03C17/245 ; C04B35/01 ; C23C14/08 ; C23C14/58
摘要:
A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
公开/授权文献
- US20170186843A1 Metal Oxide Film and Semiconductor Device 公开/授权日:2017-06-29
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