Invention Grant
- Patent Title: Metal oxide film and semiconductor device
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Application No.: US15391186Application Date: 2016-12-27
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Publication No.: US10096684B2Publication Date: 2018-10-09
- Inventor: Yasuharu Hosaka , Toshimitsu Obonai , Yukinori Shima , Masami Jintyou , Daisuke Kurosaki , Takashi Hamochi , Junichi Koezuka , Kenichi Okazaki , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2015-257710 20151229; JP2016-125478 20160624
- Main IPC: H01L29/24
- IPC: H01L29/24 ; C04B35/453 ; C04B35/622 ; H01L29/786 ; C03C17/245 ; C04B35/01 ; C23C14/08 ; C23C14/58

Abstract:
A metal oxide film includes indium, M, (M is Al, Ga, Y, or Sn), and zinc and includes a region where a peak having a diffraction intensity derived from a crystal structure is observed by X-ray diffraction in the direction perpendicular to the film surface. Moreover, a plurality of crystal parts is observed in a transmission electron microscope image in the direction perpendicular to the film surface. The proportion of a region other than the crystal parts is higher than or equal to 20% and lower than or equal to 60%.
Public/Granted literature
- US20170186843A1 Metal Oxide Film and Semiconductor Device Public/Granted day:2017-06-29
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