Invention Grant
- Patent Title: Through substrate via liner densification
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Application No.: US14948074Application Date: 2015-11-20
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Publication No.: US10163655B2Publication Date: 2018-12-25
- Inventor: Jin Lu , Rita J. Klein , Diem Thy N. Tran , Irina V. Vasilyeva , Zhiqiang Xie
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L29/40
- IPC: H01L29/40 ; H01L21/321 ; H01L21/768 ; H01L21/02 ; H01L21/311 ; H01L23/48

Abstract:
Apparatuses and methods are disclosed herein for densification of through substrate insulating liners. An example method may include forming a through substrate via through at least a portion of a substrate, forming a first liner layer in the through substrate via, and densifying the first liner layer. The example method may further include forming a second liner layer on the first liner layer, and densifying the second liner layer.
Public/Granted literature
- US20170148674A1 THROUGH SUBSTRATE VIA LINER DENSIFICATION Public/Granted day:2017-05-25
Information query
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