Methods of Forming Structures
    6.
    发明申请
    Methods of Forming Structures 有权
    形成结构的方法

    公开(公告)号:US20160005966A1

    公开(公告)日:2016-01-07

    申请号:US14321419

    申请日:2014-07-01

    Abstract: Some embodiments include methods of forming structures. Spaced-apart features are formed which contain temperature-sensitive material. Liners are formed along sidewalls of the features under conditions which do not expose the temperature-sensitive material to a temperature exceeding 300° C. The liners extend along the temperature-sensitive material and narrow gaps between the spaced-apart features. The narrowed gaps are filled with flowable material which is cured under conditions that do not expose the temperature-sensitive material to a temperature exceeding 300° C. In some embodiments, the features contain memory cell regions over select device regions. The memory cell regions include first chalcogenide and the select device regions include second chalcogenide. The liners extend along and directly against the first and second chalcogenides.

    Abstract translation: 一些实施方案包括形成结构的方法。 形成了包含温度敏感材料的间隔特征。 在不将温度敏感材料暴露于超过300℃的温度的条件下,衬垫沿着特征的侧壁形成。衬垫沿着温度敏感材料延伸并且间隔开的特征之间的间隙变窄。 狭窄的间隙填充有可流动材料,其在不使温度敏感材料暴露于超过300℃的条件下固化。在一些实施例中,特征包含超过选择的器件区域的存储单元区域。 存储单元区域包括第一硫族化物,选择装置区域包括第二硫族化物。 衬垫沿着并直接抵靠第一和第二硫族化物。

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