发明授权
- 专利标题： Hybridization fin reveal for uniform fin reveal depth across different fin pitches
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申请号： US15718577申请日： 2017-09-28
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公开(公告)号： US10163721B2公开(公告)日： 2018-12-25
- 发明人: Zhenxing Bi , Donald F. Canaperi , Thamarai S. Devarajan , Sivananda K. Kanakasabapathy , Fee Li Lie , Peng Xu
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/06 ; H01L21/762 ; H01L21/311 ; H01L29/78 ; H01L21/02 ; H01L29/66
摘要：
A method for uniform fin reveal depth for semiconductor devices includes dry etching a dielectric material to reveal semiconductor fins by a quasi-atomic layer etching (quasi-ALE) process to achieve depth uniformity across different fin pitches. A lateral bias induced by the quasi-ALE process is compensated for by isotropically etching the dielectric material.
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