- 专利标题： Opening in the pad for bonding integrated passive device in InFO package
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申请号： US14979954申请日： 2015-12-28
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公开(公告)号： US10165682B2公开(公告)日： 2018-12-25
- 发明人: Cheng-Hsien Hsieh , Chi-Hsi Wu , Chen-Hua Yu , Der-Chyang Yeh , Hsien-Wei Chen , Li-Han Hsu , Wei-Cheng Wu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater Matsil, LLP
- 主分类号： H05K1/11
- IPC分类号： H05K1/11 ; H01L23/00 ; H05K1/18 ; H05K1/02
摘要：
A package includes a conductive pad, with a plurality of openings penetrating through the conductive pad. A dielectric layer encircles the conductive pad. The dielectric layer has portions filling the plurality of openings. An Under-Bump Metallurgy (UBM) includes a via portion extending into the dielectric layer to contact the conductive pad. A solder region is overlying and contacting the UBM. An integrated passive device is bonded to the UBM through the solder region.
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